VTVS23ASMF-HM3-18 Allicdata Electronics
Allicdata Part #:

VTVS23ASMF-HM3-18-ND

Manufacturer Part#:

VTVS23ASMF-HM3-18

Price: $ 0.08
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 22.6V 38V DO219AB
More Detail: N/A
DataSheet: VTVS23ASMF-HM3-18 datasheetVTVS23ASMF-HM3-18 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
50000 +: $ 0.06615
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: Automotive, AEC-Q101, TransZorb®
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 22.6V
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 38V
Current - Peak Pulse (10/1000µs): 10.09A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: Automotive
Capacitance @ Frequency: 480pF @ 1MHz
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Description

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TVS diode is a protective device for voltage surge usually used in automotive and industrial electrical system. The main purpose of a TVS diode is to protect the circuit against transient voltage spikes. These devices include the VTVS23ASMF-HM3-18, which is widely used in the automotive and industrial fields.

The VTVS23ASMF-HM3-18 is an axial-leaded TVS diode with an operating voltage rating of 5v-18v and a peak surge voltage of 55 volts. It is equipped with avalanche characteristic that enhances the surge current holding and clamping capabilities to fasten the response and reduce the noise levels. It is designed to protect circuits against transients of up to 50A in a single p-n junction. The VTVS23ASMF-HM3-18 are especially designed to protect automotive, industrial, and high power systems from transient voltage overload.

The working principle of the VTVS23ASMF-HM3-18 is based on the concept of the avalanche breakdown effect. During the normal operation of a circuit, the diode is in a reverse bias state and provides an open circuit. When there is an overvoltage, the voltage across the diode increases rapidly and causes an avalanche breakdown and thus the electrons tunnel through the junction. This results in the current through the circuit rising and diverting the excessive voltage into the diode.

Then, the stored charges across the diode cause a clamping effect that limits the voltage across the diode to the avalanche voltage level. After the excessive voltage is dissipated, the stored charge decays and the diode is able to reset itself and get into the reverse bias state. This helps to protect the circuit from an overvoltage situation.

The VTVS23ASMF-HM3-18 is a versatile battery protector, suitable for any situation where transient voltage suppression is needed. It combines both reverse current blocking and transient voltage suppression in a single package, thus providing a cost-effective solution for any application. Furthermore, the VTVS23ASMF-HM3-18 offers superior thermal performance, fast response time, excellent low-leakage current, and endurance under high surge current.

In conclusion, the VTVS23ASMF-HM3-18 is a highly efficient and versatile TVS diode that can be used to protect automotive, industrial, and high power systems from transient voltage overload. It is designed to provide superior performance, endurance, and fast response time, along with excellent surge current and low leakage current. Its operating principle is based on the avalanche breakdown effect, which helps it to clamp the excessive voltage by storing charges across the diode.

The specific data is subject to PDF, and the above content is for reference

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