
Allicdata Part #: | W29N01GVBIAA-ND |
Manufacturer Part#: |
W29N01GVBIAA |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC FLASH 1G PARALLEL 63VFBGA |
More Detail: | FLASH - NAND (SLC) Memory IC 1Gb (128M x 8) Parall... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Discontinued at Digi-Key |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND (SLC) |
Memory Size: | 1Gb (128M x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 63-VFBGA |
Supplier Device Package: | 63-VFBGA (9x11) |
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Memory technology is a vital component of modern computing. It enables fast data storage and retrieval, allowing users to recall information quickly. The W29N01GVBIAA is a type of non-volatile memory device, meaning it doesn\'t lose its data when powered off. This makes it an ideal choice for applications that need to store data securely. In addition, the memory device is fast and requires minimal power consumption, making it highly efficient.
The W29N01GVBIAA is a type of NAND flash memory device. It has a four bit multiplex bus interface and is designed for use in high density memory applications. The device is available in a wide range of capacities, including 512MB, 1GB, 2GB, 4GB and 8GB. It is packaged in a tiny package, making it ideal for use in smaller form factors, such as tablets and smartphones.
The W29N01GVBIAA has several unique characteristics that make it suitable for a variety of applications. It uses a 0.18um multi-level cell technology which greatly enhances write performance while also protecting data integrity. Additionally, the device comes with two logic devices – a serial flash controller and write security protocol – which make programming easier and more reliable.
The working principle of the W29N01GVBIAA is based on NAND Cell voltage levels. It uses two different voltages, one for programming data and one for erasing data. The programming voltage causes electrons to move from the top layer of the NAND Cell to the bottom layer, making the entire cell turn ‘on’. The erase voltage causes the electrons to move back to the top layer, making the entire cell turn ‘off’. This simple process is the basis for storing, retrieving and erasing data from the device.
The W29N01GVBIAA is a highly reliable non-volatile memory device that is perfect for applications that require fast data retrieval and storage while minimizing power consumption. Its small form factor and low-power usage make it suitable for use in mobile devices where size and power are important considerations. This makes it an ideal choice for a variety of applications, including digital cameras, industrial automation systems and consumer electronics.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
W29N01HVBINF | Winbond Elec... | 2.09 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
W29N04GZBIBA | Winbond Elec... | 5.79 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
W29N01HVSINF | Winbond Elec... | 2.1 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
W29N01HVDINA | Winbond Elec... | 2.02 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N02GVBIAF | Winbond Elec... | 3.1 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
W29N02GVSIAA | Winbond Elec... | 3.75 $ | 11411 | IC FLASH 2G PARALLEL 48TS... |
W29N04GVSIAA | Winbond Elec... | 6.01 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
W29N04GVBIAF | Winbond Elec... | 5.54 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
W29N01GVDIAA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N01GVBIAA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
W29N04GVBIAA | Winbond Elec... | 5.54 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
W29N04GWBIBA | Winbond Elec... | 5.79 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
W29N01GWDIBA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N01HVSINA | Winbond Elec... | 2.1 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
W29N01GVSIAA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
W29N02GVSIAF | Winbond Elec... | 3.28 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
W29N01HVDINF | Winbond Elec... | 2.02 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N02GZBIBA | Winbond Elec... | 3.37 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
W29N01HVBINA | Winbond Elec... | 2.09 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
W29N04GVSIAF | Winbond Elec... | 6.01 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
W29N01GZDIBA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N02GWBIBA | Winbond Elec... | 3.37 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
W29N02GVBIAA | Winbond Elec... | 3.91 $ | 776 | IC FLASH 2G PARALLEL 63FB... |
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