W29N01GVBIAA Allicdata Electronics
Allicdata Part #:

W29N01GVBIAA-ND

Manufacturer Part#:

W29N01GVBIAA

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC FLASH 1G PARALLEL 63VFBGA
More Detail: FLASH - NAND (SLC) Memory IC 1Gb (128M x 8) Parall...
DataSheet: W29N01GVBIAA datasheetW29N01GVBIAA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)
Description

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Memory technology is a vital component of modern computing. It enables fast data storage and retrieval, allowing users to recall information quickly. The W29N01GVBIAA is a type of non-volatile memory device, meaning it doesn\'t lose its data when powered off. This makes it an ideal choice for applications that need to store data securely. In addition, the memory device is fast and requires minimal power consumption, making it highly efficient.

The W29N01GVBIAA is a type of NAND flash memory device. It has a four bit multiplex bus interface and is designed for use in high density memory applications. The device is available in a wide range of capacities, including 512MB, 1GB, 2GB, 4GB and 8GB. It is packaged in a tiny package, making it ideal for use in smaller form factors, such as tablets and smartphones.

The W29N01GVBIAA has several unique characteristics that make it suitable for a variety of applications. It uses a 0.18um multi-level cell technology which greatly enhances write performance while also protecting data integrity. Additionally, the device comes with two logic devices – a serial flash controller and write security protocol – which make programming easier and more reliable.

The working principle of the W29N01GVBIAA is based on NAND Cell voltage levels. It uses two different voltages, one for programming data and one for erasing data. The programming voltage causes electrons to move from the top layer of the NAND Cell to the bottom layer, making the entire cell turn ‘on’. The erase voltage causes the electrons to move back to the top layer, making the entire cell turn ‘off’. This simple process is the basis for storing, retrieving and erasing data from the device.

The W29N01GVBIAA is a highly reliable non-volatile memory device that is perfect for applications that require fast data retrieval and storage while minimizing power consumption. Its small form factor and low-power usage make it suitable for use in mobile devices where size and power are important considerations. This makes it an ideal choice for a variety of applications, including digital cameras, industrial automation systems and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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