W29N01HVSINA Allicdata Electronics
Allicdata Part #:

W29N01HVSINA-ND

Manufacturer Part#:

W29N01HVSINA

Price: $ 2.10
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC FLASH 1G PARALLEL 48TSOP
More Detail: FLASH - NAND (SLC) Memory IC 1Gb (128M x 8) Parall...
DataSheet: W29N01HVSINA datasheetW29N01HVSINA Datasheet/PDF
Quantity: 1000
96 +: $ 1.90844
Stock 1000Can Ship Immediately
$ 2.1
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 48-TSOP (18.4x12)
Description

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W29N01HVSINA is a Memory application device. It’s a type of non-volatile random access memory (NVRAM) product. It is used in many different applications, ranging from industrial and consumer products to embedded systems.

The application field of W29N01HVSINA includes digital memory, data storage and other non-volatile memory devices. It can also be used as an embedded memory chip in consumer products. This application field offers various advantages, ranging from reliability to cost savings.

The working principle of W29N01HVSINA is based on the principle of charge-coupled device (CCD). The CCD technology stores the charges in a large number of small capacitors, which can be altered by changing voltage levels. The stored information can then be retrieved from the memory chip. The capacitors in the CCD are arranged in a series, and each capacitor is separated by a thin oxide layer.

The working principle of W29N01HVSINA is also based on the fact that each capacitor can store a certain electrical charge. This charge can be changed by altering the voltage levels. The device is used to store information in memory domains. It is an information storage that uses the non-volatile nature of the capacitors. This means that the information stored in the device will remain intact even if the power supply is disconnected.

The W29N01HVSINA uses a number of techniques to improve its reliability and performance. It can be used as a storage device or an embedded memory device. It uses ECC (Error Correcting Code) to detect and correct errors that may occur in the memory chip. It also uses a built-in self-test (BIST) to ensure correct operation of the device.

The device also has a built-in power-on reset (POR) circuit, which is used to protect the memory from power surges. The POR circuit reduces the risk of data loss and improves the data integrity in an event of power failure.

The W29N01HVSINA provides reliable and cost-effective memory solutions for a wide range of applications. It is a highly reliable, high-performance device with a long service life. It is suitable for use in industrial products and consumer products, such as cellular phones, cameras, PDAs, and tablet computers.

The specific data is subject to PDF, and the above content is for reference

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