![W29N01HVBINF Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | W29N01HVBINF-ND |
Manufacturer Part#: |
W29N01HVBINF |
Price: | $ 2.09 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC FLASH 1G PARALLEL 63VFBGA |
More Detail: | FLASH - NAND (SLC) Memory IC 1Gb (128M x 8) Parall... |
DataSheet: | ![]() |
Quantity: | 1000 |
210 +: | $ 1.90356 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND (SLC) |
Memory Size: | 1Gb (128M x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 63-VFBGA |
Supplier Device Package: | 63-VFBGA (9x11) |
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W29N01HVBINF is a type of nonvolatile memory that uses two terminal transistors to store data, also known as a two-terminal Flash memory. This type of memory technology has been used in a variety of applications, and its usage has grown exponentially in recent years. In this article, we will explore the application field and working principle of W29N01HVBINF memory.
Application Field: W29N01HVBINF is most commonly used for applications in computers, cellular phones, hard drives, industrial automation, and consumer products, such as table media players. W29N01HVBINF memory is also used in medical devices and in industrial systems for storing program code. This type of memory technology is also used for storing and running data processing applications, such as Java, .NET, and MATLAB.
Working Principle: W29N01HVBINF is a non-volatile type of memory that stores data by trapping electrons in tiny cells made up of two floating-gate transistors. These two transistors and two cells form the basic building blocks of the memory. The two transistors are connected to two electrodes; one is connected to a bit line, and the other to a control gate. The bit line is responsible for carrying bit value information, while the control gate is responsible for controlling the bit value. When a charge is applied to the bit line, it passes through the cell, and the electrons trapped in it cause the bit to be stored in the cell.
When the bit is stored, the value of the bit is passed to the output terminals, and any data that is stored in the cell is retained until it is overwritten. This makes W29N01HVBINF memory a non-volatile type of memory, as data is not lost when the power is disconnected. The W29N01HVBINF is also a very low-cost type of memory, as the cost of its components is much lower than other types of memory technologies.
Advantages: W29N01HVBINF memory has several advantages compared to other memory technologies. The first is its high density, which allows for a lot of data to be stored in a very small amount of space. Additionally, it is much more reliable than other types of memory, as it is not susceptible to wear and tear due to its non-volatile nature. Additionally, W29N01HVBINF memory has very fast read and write speeds, which make it ideal for applications that require quick access to data.
Conclusion: W29N01HVBINF memory is a type of non-volatile memory technology that is used for a variety of applications. It has several advantages over other types of memory, such as its high density, fast read and write speeds, and its reliability. W29N01HVBINF is the ideal choice for applications that require quick access to data and are looking for a reliable, low-cost memory solution.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
W29N02GVBIAA | Winbond Elec... | 3.91 $ | 776 | IC FLASH 2G PARALLEL 63FB... |
W29N02GVSIAA | Winbond Elec... | 3.75 $ | 11411 | IC FLASH 2G PARALLEL 48TS... |
W29N01GVDIAA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N01GVSIAA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
W29N01GWDIBA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N01GZDIBA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N01GVBIAA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
W29N01HVDINA | Winbond Elec... | 2.02 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N01HVDINF | Winbond Elec... | 2.02 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N01HVBINA | Winbond Elec... | 2.09 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
W29N01HVBINF | Winbond Elec... | 2.09 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
W29N01HVSINA | Winbond Elec... | 2.1 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
W29N01HVSINF | Winbond Elec... | 2.1 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
W29N04GWBIBA | Winbond Elec... | 5.79 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
W29N04GZBIBA | Winbond Elec... | 5.79 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
W29N04GVSIAA | Winbond Elec... | 6.01 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
W29N04GVSIAF | Winbond Elec... | 6.01 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
W29N02GVBIAF | Winbond Elec... | 3.1 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
W29N02GVSIAF | Winbond Elec... | 3.28 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
W29N02GWBIBA | Winbond Elec... | 3.37 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
W29N02GZBIBA | Winbond Elec... | 3.37 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
W29N04GVBIAA | Winbond Elec... | 5.54 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
W29N04GVBIAF | Winbond Elec... | 5.54 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
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