Allicdata Part #: | W29N01GZDIBA-ND |
Manufacturer Part#: |
W29N01GZDIBA |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC FLASH 1G PARALLEL 48VFBGA |
More Detail: | FLASH - NAND (SLC) Memory IC 1Gb (128M x 8) Parall... |
DataSheet: | W29N01GZDIBA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND (SLC) |
Memory Size: | 1Gb (128M x 8) |
Write Cycle Time - Word, Page: | 35ns |
Access Time: | 35ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-VFBGA |
Supplier Device Package: | 48-VFBGA (8x6.5) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is one of the most important components of computers and other digital devices. The memory technology behind it is constantly changing, evolving and improving with the development of modern technology. A mainstay of recent memory developments is the W29N01GZDIBA application field and working principle.
The W29N01GZDIBA is a multi-level cell, or MLC flash memory chip, which is one of the primary types of memory technology used in consumer devices. It provides a high-density memory solution, which is ideal for large-scale data storage applications. The W29N01GZDIBA chip uses eight stacked layers to store up to 8 bits of information in each cell, giving it a data density of 32Gb per chip. This makes it suitable for high-capacity storage applications such as consumer video cameras and digital video recorders.
The working principle of the W29N01GZDIBA chip is based on charge trapping, which is the process of storing a charge in a non-volatile memory cell. This is done by applying varying electrical fields to metal-oxide layers in each memory cell. During a read operation, the metal-oxide layer is charged with a positive potential to inject electrons - which represent the data bit - into the floating gate of the memory cell. As long as the electrical field remains constant, the charge will be maintained in the memory cell, even when the power has been removed.
When the data needs to be read or written, the electrical field is altered, allowing electrons to enter or exit the cell. The data is encoded in the electrons; a 1 if they are present, or a 0 if they are not present. This allows the chip to store and recall data on a byte by byte basis.
The W29N01GZDIBA chip offers several advantages over traditional memory chips. It has better endurance for write cycles, which means that it can take more writes over its lifetime than other types of memory. It also has better write speed, which enables it to store data more quickly. Additionally, the chip has much higher capacity than traditional memory chips, allowing it to store much more data in a single chip.
The W29N01GZDIBA chip is an excellent example of the progress that has been made in memory technology over the past few years. It provides a high-density and high-capacity solution for data storage applications, with good endurance, write speed and capacity. Its use is becoming increasingly popular in consumer devices, and its advantages over traditional memory chips make it an excellent choice for high-capacity data storage.
The specific data is subject to PDF, and the above content is for reference
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W29N01GVSIAA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
W29N01GWDIBA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N01GZDIBA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N01GVBIAA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
W29N01HVDINA | Winbond Elec... | 2.02 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N01HVDINF | Winbond Elec... | 2.02 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
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W29N01HVBINF | Winbond Elec... | 2.09 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
W29N01HVSINA | Winbond Elec... | 2.1 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
W29N01HVSINF | Winbond Elec... | 2.1 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
W29N04GWBIBA | Winbond Elec... | 5.79 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
W29N04GZBIBA | Winbond Elec... | 5.79 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
W29N04GVSIAA | Winbond Elec... | 6.01 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
W29N04GVSIAF | Winbond Elec... | 6.01 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
W29N02GVBIAF | Winbond Elec... | 3.1 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
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W29N04GVBIAA | Winbond Elec... | 5.54 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
W29N04GVBIAF | Winbond Elec... | 5.54 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
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