Allicdata Part #: | W29N02GVBIAF-ND |
Manufacturer Part#: |
W29N02GVBIAF |
Price: | $ 3.10 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC FLASH 2G PARALLEL 63VFBGA |
More Detail: | FLASH - NAND (SLC) Memory IC 2Gb (256M x 8) Parall... |
DataSheet: | W29N02GVBIAF Datasheet/PDF |
Quantity: | 1000 |
210 +: | $ 2.81373 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND (SLC) |
Memory Size: | 2Gb (256M x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 63-VFBGA |
Supplier Device Package: | 63-VFBGA (9x11) |
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Memory: W29N02GVBIAF Application Field and Working Principle
Memory is an essential component of every modern system. It allows computers to store and access data quickly and easily. W29N02GVBIAF is a type of memory developed by Winbond Electronics Corporation which offers a wide range of features and advantages for various applications. This article will discuss the application field and working principle of W29N02GVBIAF.
Application Field
W29N02GVBIAF has been designed to increase data storage density and improve system performance. The memory can support both static random access memory (SRAM) and dynamic random access memory (DRAM) architectures. It is suitable for a range of applications, including consumer electronics, medical devices, avionics, and instrumentation systems. In addition, W29N02GVBIAF is often used as a cache memory in servers and mainframes due to its high speed and low power consumption.
The memory is also used in automotive and consumer electronics applications, such as navigation systems and audio/visual equipment. W29N02GVBIAF has also been used in high-precision 3D graphics applications and industrial machine-vision systems. Furthermore, W29N02GVBIAF is also suitable for embedded systems, such as those found in smartphones, tablets, and other handheld devices.
Working Principle
W29N02GVBIAF is based on a 3D stacked NAND architecture which maximizes performance and enables faster data speeds. The memory features a two-level organization of plane and die. Each plane is composed of NAND cells arranged in a die-to-die, plane-to-plane fashion. The planes are connected through a vertical interconnect structure which allows faster and more efficient data transfer.
The memory also utilizes W29N02GVBIAF’s secret sauce, which is its patented half-anodic mode read and program technology. This technology reduces the time needed to read and program a single cell by up to 50 percent, producing faster data transfer rates.
In addition, W29N02GVBIAF also uses multiple independent data path technology to maximize power efficiency. This technology allows the memory to complete certain operations faster by allowing each plane to operate independently, reducing the required power consumption. The memory also utilizes error correction code (ECC) and an on-chip ECC engine to reduce soft-failure conditions, ensuring reliable data storage and retrieval.
Conclusion
W29N02GVBIAF is an advanced type of memory developed by Winbond Electronics Corporation. It is suitable for a range of applications, including consumer electronics, medical devices, avionics, and instrumentation systems. The memory utilizes a 3D stacked NAND architecture and has multiple independent data paths to maximize power efficiency. In addition, W29N02GVBIAF also utilizes patented half-anodic mode read and program technology and error correction code (ECC) to ensure reliable data storage and retrieval.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
W29N02GVBIAA | Winbond Elec... | 3.91 $ | 776 | IC FLASH 2G PARALLEL 63FB... |
W29N02GVSIAA | Winbond Elec... | 3.75 $ | 11411 | IC FLASH 2G PARALLEL 48TS... |
W29N01GVDIAA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N01GVSIAA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
W29N01GWDIBA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N01GZDIBA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N01GVBIAA | Winbond Elec... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
W29N01HVDINA | Winbond Elec... | 2.02 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N01HVDINF | Winbond Elec... | 2.02 $ | 1000 | IC FLASH 1G PARALLEL 48VF... |
W29N01HVBINA | Winbond Elec... | 2.09 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
W29N01HVBINF | Winbond Elec... | 2.09 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
W29N01HVSINA | Winbond Elec... | 2.1 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
W29N01HVSINF | Winbond Elec... | 2.1 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
W29N04GWBIBA | Winbond Elec... | 5.79 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
W29N04GZBIBA | Winbond Elec... | 5.79 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
W29N04GVSIAA | Winbond Elec... | 6.01 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
W29N04GVSIAF | Winbond Elec... | 6.01 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
W29N02GVBIAF | Winbond Elec... | 3.1 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
W29N02GVSIAF | Winbond Elec... | 3.28 $ | 1000 | IC FLASH 2G PARALLEL 48TS... |
W29N02GWBIBA | Winbond Elec... | 3.37 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
W29N02GZBIBA | Winbond Elec... | 3.37 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
W29N04GVBIAA | Winbond Elec... | 5.54 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
W29N04GVBIAF | Winbond Elec... | 5.54 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
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