W632GG6KB-09 Allicdata Electronics
Allicdata Part #:

W632GG6KB-09-ND

Manufacturer Part#:

W632GG6KB-09

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC DRAM 2G PARALLEL 1066MHZ
More Detail: SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 10...
DataSheet: W632GG6KB-09 datasheetW632GG6KB-09 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Clock Frequency: 1066MHz
Write Cycle Time - Word, Page: --
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

When it comes to Memory products, W632GG6KB-09 is a leading technology in the industry. With its advanced features and reliable performance, it is widely used across many applications. The following article will provide an introduction to the application field and working principle of W632GG6KB-09.

Application Field

W632GG6KB-09 is a type of DRAM semiconductor device that is widely used in various applications such as industrial automation, IoT, computer systems, and gaming consoles. It is designed to maximize efficiency and offer fast access time for memory operations. Its advanced features make it well-suited for high-performance applications that require large storage capacities.

The device is also suitable for a variety of security systems. It provides data encryption and supports authenticated access control, which helps to protect against cyber threats. Additionally, its enhanced refresh functions reduce power consumption, making it an ideal choice for battery-powered or mobile applications.

Working Principle

W632GG6KB-09 typically includes four basic units: an input/output port, an address decoder, a bank selector, and an array of cells. The device receives commands and addresses through the input/output port, which is then decoded by the address decoder. The bank selector identifies and selects an available bank of memory cells. Finally, the selected bank is used to construct the memory array.

After receiving the commands and addresses, the device starts an operation. If it is a read operation, the chosen bank of cells is accessed and the data is extracted. If it is a write operation, the data is written into the selected bank of cells. Once the operation is completed, the memory array is then released and ready for the next operation.

In addition to the standard read and write operations, W632GG6KB-09 also offers advanced features such as burst operations, page reads and writes, and concurrent operations. Burst operations allow multiple consecutive operations from a single command, while page operations allow for data transfers in larger blocks. The concurrent operation feature allows several operations to be performed simultaneously, increasing overall throughput.

Conclusion

W632GG6KB-09 is a powerful DRAM semiconductor device that is suitable for a wide range of applications. Its advanced features make it well-suited for high-performance applications that require large storage capacities, while its low power consumption makes it ideal for battery-powered or mobile applications. It includes four basic units and supports various operations, including read, write, burst, page, and concurrent operations.

The specific data is subject to PDF, and the above content is for reference

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