W632GU6KB12I TR Allicdata Electronics
Allicdata Part #:

W632GU6KB12ITR-ND

Manufacturer Part#:

W632GU6KB12I TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Winbond Electronics
Short Description: IC DRAM 2G PARALLEL 96WBGA
More Detail: SDRAM - DDR3L Memory IC 2Gb (128M x 16) Parallel 8...
DataSheet: W632GU6KB12I TR datasheetW632GU6KB12I TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (128M x 16)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: --
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-WBGA (9x13)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

W632GU6KB12I TR is a type of memory device and is the latest evolution in DRAM technology. It offers an industry-leading level of performance, combining high speed and low latency read/write operations. This memory device also provides excellent robustness and reliability.

W632GU6KB12I TR is used in a variety of applications, from personal computing to large enterprise servers and high performance computing systems. It can be used to store program code and data, providing fast access to both. It is also used to store large amounts of data, such as databases and images. Additionally, this device can be used to improve system performance, as it provides quick access to frequently used data.

This memory device is based on a 3D stacking technology that allows multiple layers of memory cells to be stacked on top of each other. This provides a higher memory density, as more memory can be packed into the same space. Additionally, 3D stacking reduces the signal interference between memory cells, allowing them to operate at higher speeds. The W632GU6KB12I TR uses a multi-channel controller to access data from the multiple layers, allowing for efficient access of data from the entire memory array.

The working principle of the W632GU6KB12I TR is relatively simple. The controller on the device sends a request for data to the memory chips, which then access the requested data. The controller then receives the data and sends it back to the system. As the data is stored in the memory chips, the controller does not need to wait for the data to be accessed before it can be used, allowing for faster access of the data. This speed can be further increased by using multiple controllers or using a faster memory interface.

The W632GU6KB12I TR has several advantages over other DRAM technologies. It offers improved performance, robustness and reliability, as well as a smaller form factor. Additionally, its multi-channel controller and 3D stacking increase the memory density and allow for fast access of the data. This makes the W632GU6KB12I TR an ideal choice for applications that require fast storage and quick access to data.

The specific data is subject to PDF, and the above content is for reference

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