| Allicdata Part #: | W632GU8KB-12TR-ND |
| Manufacturer Part#: |
W632GU8KB-12 TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Winbond Electronics |
| Short Description: | IC DRAM 2G PARALLEL 78WBGA |
| More Detail: | SDRAM - DDR3L Memory IC 2Gb (256M x 8) Parallel 80... |
| DataSheet: | W632GU8KB-12 TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Discontinued at Digi-Key |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - DDR3L |
| Memory Size: | 2Gb (256M x 8) |
| Clock Frequency: | 800MHz |
| Write Cycle Time - Word, Page: | -- |
| Access Time: | 20ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.283 V ~ 1.45 V |
| Operating Temperature: | 0°C ~ 95°C (TC) |
| Mounting Type: | Surface Mount |
| Package / Case: | 78-TFBGA |
| Supplier Device Package: | 78-WBGA (10.5x8) |
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Introduction
The W632GU8KB-12 TR module is a type of non-volatile memory (NVM) technology, developed by Samsung Semiconductor Inc. This NVM technology is the most advanced and highest-density flash memory available on the market currently. It allows the greatest memory capacity of any non-volatile memory while being highly reliable and energy efficient. The W632GU8KB-12 TR module provides high-speed access to stored data and can be used as a system or application memory.
Application Field
The W632GU8KB-12 TR module has a number of applications in various fields. It is typically used for data storage and processing in consumer electronics, telecom applications, industrial automation, medical and automotive systems. Its wide range of applications includes embedded systems, automotive infotainment systems, wearable electronics, mobile and wireless communications, wearable computer devices, multimedia devices and smart homes.
The W632GU8KB-12 TR module is also suitable for a variety of industrial applications such as unmanned aerial vehicles (UAVs), industrial automated processes, robotics and industrial control systems. Its energy efficient design allows for longer runtimes and greater reliability in harsh conditions and environments, making it a reliable memory solution for industrial applications.
The W632GU8KB-12 TR module can also be used as a storage device in embedded systems, mobile and wireless communications and mobile devices. It can provide a low-power solution for data storage, as well as for real-time monitoring and data management in system operations.
Working Principle
The working principle of the W632GU8KB-12 TR module is based on NAND flash memory technology. This technology uses individual cells which can be programmed and read using a dedicated controller. Each cell is composed of 24 levels which are stacked in a 3D architecture. This 3D structure enables a higher storage density, while keeping power consumption and programming time low. The cells contain a layer of memory filled with small diodes which are addressed and programmed to store data.
The module is also equipped with advanced error correction code (ECC) technology, which ensures accurate data storage and retrieval. The W632GU8KB-12 TR module is also designed with an integrated controller which is responsible for managing and optimizing the operations of the NAND flash memory. The controller is designed for data integrity and is capable of performing a number of functions to improve the reliability and performance of the memory.
Conclusion
The W632GU8KB-12 TR module is an NVM technology which provides enhanced memory capacity and reliability. Its 3D cell architecture allows for lower power consumption and higher storage density, while its advanced ECC technology ensures data integrity and accuracy. The integrated controller also provides improved performance and reliability. Its wide range of applications makes it suitable for data storage and processing in various fields.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| W632GG8KB-15 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
| W632GG6KB12I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
| W632GG6KB15I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
| W632GU8MB-15 TR | Winbond Elec... | 3.41 $ | 1000 | IC DRAM 2G PARALLEL 667MH... |
| W632GU8KB-12 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
| W632GG8KB-11 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
| W632GG8KB-12 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
| W632GU6KB12J | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 800MH... |
| W632GU6MB12I TR | Winbond Elec... | 4.09 $ | 1000 | IC DRAM 2G PARALLEL 800MH... |
| W632GU8AB-12 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 800MH... |
| W632GU6KB-11 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 933MH... |
| W632GG8AB-15 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 667MH... |
| W632GG6KB-12 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
| W632GU6KB12I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
| W632GG6KB-18 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 533MH... |
| W632GU6AB-12 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 800MH... |
| W632GG6MB12I TR | Winbond Elec... | 4.09 $ | 1000 | IC DRAM 2G PARALLEL 800MH... |
| W632GG6KB-11 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
| W632GG6KB12I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
| W632GU6MB15I | Winbond Elec... | 4.92 $ | 1000 | IC DRAM 2G PARALLEL 667MH... |
| W632GG6MB15I | Winbond Elec... | 4.92 $ | 1000 | IC DRAM 2G PARALLEL 667MH... |
| W632GU8KB15I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
| W632GG6MB-11 TR | Winbond Elec... | 3.48 $ | 1000 | IC DRAM 2G PARALLEL 933MH... |
| W632GG6MB-09 | Winbond Elec... | 4.36 $ | 1000 | IC DRAM 2G PARALLEL 1066M... |
| W632GU6KB-15 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
| W632GG6AB-12 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 800MH... |
| W632GG6KB11I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 933MH... |
| W632GU6MB12I | Winbond Elec... | 4.92 $ | 1000 | IC DRAM 2G PARALLEL 800MH... |
| W632GU6KB15I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
| W632GU8MB-11 | Winbond Elec... | 4.14 $ | 1000 | IC DRAM 2G PARALLEL 933MH... |
| W632GG8MB-11 | Winbond Elec... | 4.14 $ | 1000 | IC DRAM 2G PARALLEL 933MH... |
| W632GU6AB-15 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 667MH... |
| W632GG8MB-12 | Winbond Elec... | 4.91 $ | 242 | IC DRAM 2G PARALLEL 78VFB... |
| W632GG8KB12I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
| W632GU8KB12I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
| W632GG6KB-09 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 1066M... |
| W632GU8KB-12 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
| W632GG6MB-12 | Winbond Elec... | 4.91 $ | 245 | IC DRAM 2G PARALLEL 800MH... |
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W632GU8KB-12 TR Datasheet/PDF