Allicdata Part #: | W632GU8MB-15-ND |
Manufacturer Part#: |
W632GU8MB-15 |
Price: | $ 3.92 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Winbond Electronics |
Short Description: | IC DRAM 2G PARALLEL 667MHZ |
More Detail: | SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 66... |
DataSheet: | W632GU8MB-15 Datasheet/PDF |
Quantity: | 1000 |
242 +: | $ 3.55872 |
Series: | -- |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR3 |
Memory Size: | 2Gb (128M x 16) |
Clock Frequency: | 667MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.283 V ~ 1.45 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
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The W632GU8MB-15 is a type of memory that is widely used in many different applications and fields. It is designed to provide a reliable and efficient data storage solution, and is available in various configurations and capacities. The working principle of the W632GU8MB-15 is based on the NAND Flash memory architecture, which utilizes the modular array structure to store data. The memory device consists of a number of memory cells, which are interconnected through a set of control lines. Each of these cells contains two bits of information and can be read or written as desired. The device also contains a set of write/erase circuitry, which is used for performing write and erase operations on the memory cells. The data written to the memory cells are organized in pages, each of which can store up to 8KB of data.
The W632GU8MB-15 is typically used in a variety of embedded and industrial applications, such as industrial automation, automotive electronics and medical devices. It is also used in portable devices such as mobile phones and personal digital assistants. The wide range of applications for which the memory device is suitable makes it a popular choice for manufacturers and designers. Due to its high reliability and low power consumption, the device is also commonly used in mission-critical applications.
The W632GU8MB-15 memory device operates on a voltage range of 2.7V to 3.3V. It also offers a wide range of operating temperatures, from -40°C up to +85°C. This makes it suitable for use in a variety of applications, both indoors and outdoors. In addition, the device is setup and programming friendly – meaning that it is easy to set up, program, and monitor the memory device.
The working principle of the W632GU8MB-15 memory device is based on the NAND Flash technology. This type of memory architecture operates on the basis of a modular array structure, wherein data are organized into blocks, which are then further subdivided into pages. Data can be read or written to individual cells within a page. The device also utilizes a set of control lines, which are responsible for controlling the flow of data, as well as providing the timing signals necessary for the write/erase operations. In order to perform a write or erase operation on the memory cells, a control command is sent via the control lines.
Overall, the W632GU8MB-15 memory device is a reliable and efficient solution for any application which requires a high-performance and cost-effective data storage solution. Its wide range of applications, including embedded and industrial applications, make it a popular choice for many manufacturers and designers. Furthermore, its ease of setup and programming make it even more appealing for designers who wish to quickly and easily get their designs up and running.
The specific data is subject to PDF, and the above content is for reference
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W632GU8KB12I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB-15 | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB15I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB12I | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB-11 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB-12 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB12I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB-15 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG8KB15I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GG6KB-11 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GG6KB-12 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GG6KB12I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GG6KB-15 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GG6KB15I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB-12 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB12I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB-15 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU6KB15I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96WBG... |
W632GU8KB-12 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB12I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB-15 TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
W632GU8KB15I TR | Winbond Elec... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 78WBG... |
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