ZTX712STOA

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	800mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	1.25V @ 8mA, 800mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	10000 @ 500mA, 5V
Power - Max:	1W
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	E-Line-3, Formed Leads
Supplier Device Package:	E-Line (TO-92 compatible)
Base Part Number:	ZTX712

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ZTX712STOA Application Field and Working PrincipleThe ZTX712STOA is a high-performance, single, bipolar transistor designed to be used in a variety of applications. This device is produced with a special manufacturing process and has excellent performance in terms of speed, gain, power dissipation, and input/output impedance. It is particularly well-suited for use in frequency synthesizers and radio frequency (RF) circuit applications due to its low noise characteristics. In addition, the ZTX712STOA can be used in DC/DC converters, voltage regulators, and high-speed amplifier applications. The ZTX712STOA is a NPN transistor composed of three terminals which are the base, collector, and emitter. It is manufactured from planar crystalline silicon and has two junctions, the base-emitter and collector-base junctions. Each junction is designed with a P-N structure; the positive or N layer is arranged between the negative or P layers. The collector is the layer connecting between the emitter and base and the emitter is the layer connecting between the collector and the base.The ZTX712STOA uses a common emitter configuration to achieve an accurate and stable output signal. This configuration also reduces noise and allows the device to be used in high-frequency applications. In a common emitter configuration, the base-emitter (BE) junction acts as a P-N diode and generates a current when the base is forward biased. This current then flows from the collector to the emitter, generating an amplified input voltage. The ZTX712STOA also has an extremely low noise figure, due to the combination of the collector-base (CB) junction’s wide bandgap and the high-level current gain.The ZTX712STOA has a maximum collector current of 0.92 A and a maximum collector-base breakdown voltage of 30 V. It has a maximum collector-emitter saturation voltage of 0.1 V and a maximum collector-emitter voltage of 45 V. The collector-base capacitance is 4 pF, the emitter-base capacitance is 4.5 pF, and the collector-emitter capacitance is 20.1 pF. The device has a maximum operating frequency of 150 MHz and can handle up to 400 mA of collector current. The transistor has a gain (beta) of 210, a current gain of 300, and a power dissipation of 0.65 W.In conclusion, the ZTX712STOA is an ideal single, bipolar transistor for use in a variety of applications. It is a low-noise device and is optimized for high-frequency and RF circuit applications, as well as for DC/DC converters, voltage regulators, and high-speed amplifiers. It has an excellent gain, low saturation voltage, wide bandgap, and low noise figure and can handle up to 400 mA of collector current.

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