ZTX788BSTOA

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	15V
Vce Saturation (Max) @ Ib, Ic:	450mV @ 10mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	500 @ 10mA, 2V
Power - Max:	1W
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	E-Line-3, Formed Leads
Supplier Device Package:	E-Line (TO-92 compatible)
Base Part Number:	ZTX788B

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The ZTX788BSTOA is a single, NPN-type Bipolar Junction Transistor (BJT) that is used for various applications. It has a collector-emitter voltage (BVCEO) of 80V, collector-base voltage (BVCBO) of 120V, and an emitter-base voltage (BVEBO) of 5V. The ZTX788BSTOA has a collector power dissipation (PC) of much more than one watt, a DC collector current (IC) of 800mA, and a maximum operating junction temperature (Tj) of 150°C. The ZTX788BSTOA is most commonly used in the following applications: audio amplifiers, radio frequency amplifiers, switching circuits, and signal amplifying circuits. This device can also be used in low-frequency power amplifying applications and circuits that require medium-power switching. The ZTX788BSTOA uses a standard NPN-type construction. The NPN-type BJT is made of two different semiconductor materials which are negative and positive polarity, respectively. The NPN-type BJT consists of a base, collector, and emitter. The base is the control terminal and it is used to control the collector-emitter current (Ice). The collector is the load terminal and it is used to draw the collector current from the transistor. The emitter is the input terminal and it is used to supply current to the base of the transistor. The ZTX788BSTOA works by using the current flowing through the base to control the amount of current that flows through the collector-emitter path. By controlling the current flow through the collector-emitter path, the ZTX788BSTOA essentially amplifies the input signal while controlling the output voltage. This is done by the transistor changing its own current gain, also known as the β or hFE. The ZTX788BSTOA also features protection from electrostatic discharge (ESD). This protection is necessary to protect the device from being damaged by various ESD-like events. The device also has a low RDS(on) which ensures that the device does not draw too much power when it is in its active state. Additionally, the device has a low and high-current gain cut-off frequency which allows the device to operate efficiently at both low and high frequencies. Overall, the ZTX788BSTOA is an excellent device for a variety of applications. It has a robust construction, and its high-current gain cut-off frequency makes it ideal for use in both low and high-frequency applications. Additionally, its low RDS(on) and ESD protection ensure that it will be able to withstand various ESD-like events and still function properly.

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