ZTX792ASTZ Allicdata Electronics

ZTX792ASTZ Discrete Semiconductor Products

Allicdata Part #:

ZTX792ASTZDITB-ND

Manufacturer Part#:

ZTX792ASTZ

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 70V 2A E-LINE
More Detail: Bipolar (BJT) Transistor PNP 70V 2A 100MHz 1W Thro...
DataSheet: ZTX792ASTZ datasheetZTX792ASTZ Datasheet/PDF
Quantity: 1000
2000 +: $ 0.31143
6000 +: $ 0.29586
10000 +: $ 0.28474
Stock 1000Can Ship Immediately
$ 0.34
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX792A
Description

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The ZTX792ASTZ is a single bipolar junction transistor (BJT) that is designed for use in high-power applications. It is a versatile device with a wide range of applications, from switching and amplification circuits to drivers and power supplies. The ZTX792ASTZ is suitable for linear and switch mode applications at frequencies up to 400 MHz. A variety of features make it a good choice for a wide range of applications where reliability and performance are of utmost importance.

The ZTX792ASTZ has a collector-emitter voltage (Vce) rating of 100 volts and a maximum collector current of 0.65 amperes (0.78 amperes peak). It has a peak power dissipation rating of 150 watts. The turn-on delay time of the ZTX792ASTZ is less than 100 nanoseconds and the turn-off time is less than 40 nanoseconds. The device has a high input capacitance of 1,000 picofarads, which makes it ideal for high-speed switching applications.

The ZTX792ASTZ is built with a Darlington configuration, allowing the transistor to produce higher current gain than conventional BJTs. The Darlington configuration helps to prevent short-circuit damage and power dissipation in the transistor. The ZTX792ASTZ features a high breakdown voltage, so it can operate in a wide range of operating conditions. The device has a low saturation voltage, which makes it ideal for high-power switching applications. The ZTX792ASTZ is designed for high-current switching applications, but it is also suitable for low-voltage and low-power applications.

The working principle of a bipolar junction transistor is based on the movement of electrons between two terminals; the emitter and the collector. A base terminal controls the current flow between the emitter and collector. When a electrical current is applied to the base terminal, a corresponding current flows between the emitter and collector. This current is controlled by the amount of voltage applied to the base terminal. This type of transistor is commonly used in switching, amplifier, and power supply applications.

The ZTX792ASTZ transistor is designed for a variety of high-power applications. It is a versatile device with a wide range of applications. It is suitable for linear and switch mode applications at frequencies up to 400 MHz. The ZTX792ASTZ is a good choice for a wide range of applications due to its high voltage, current gain, and power dissipation ratings. It can be used for a variety of switching, amplifier and power supply applications.

In summary, the ZTX792ASTZ is a versatile single bipolar junction transistor (BJT) designed for use in high-power applications. It has a collector-emitter voltage (Vce) rating of 100 volts and a maximum collector current of 0.65 amperes (0.78 amperes peak). The device has a peak power dissipation rating of 150 watts. It has a turn-on delay time of less than 100 nanoseconds and a turn-off time of less than 40 nanoseconds. The ZTX792ASTZ is ideal for high-speed switching applications due to its high input capacitance of 1,000 picofarads. A variety of applications, such as switching, amplification, and power supplies, are possible with this transistor.

The specific data is subject to PDF, and the above content is for reference

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