Allicdata Part #: | ZTX776STOB-ND |
Manufacturer Part#: |
ZTX776STOB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 200V 1A E-LINE |
More Detail: | Bipolar (BJT) Transistor PNP 200V 1A 30MHz 1W Thro... |
DataSheet: | ZTX776STOB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 200V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 500mA, 5V |
Power - Max: | 1W |
Frequency - Transition: | 30MHz |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | E-Line-3, Formed Leads |
Supplier Device Package: | E-Line (TO-92 compatible) |
Base Part Number: | ZTX776 |
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The ZTX776STOB transistor is a silicon epitaxial PNP bipolar junction transistor intended mainly for high voltage switch applications with a power Dissipation of 1 W. Introduced by STMicroelectronics, it is designed with general-purpose applications in mind, including audio, power supplies and servo control applications. This transistor is particularly well-suited for applications requiring wide voltage and temperature ranges, along with high current gain and low distortion.
The key specs of the ZTX776STOB transistor include a collector current rating of 1 A, a hFE of 50-100 at Ic=500 mA and VCE=4.5 V, and a Collector–Emitter voltage of 80 V. The transistors also feature very low distortion and low input capacitance, which are ideal for high fidelity audio systems. The ZTX776STOB is available in To-220 and TO-252 packages.
A bipolar junction transistor (BJT) is a type of transistor commonly used in electronic components. This device consists of three layers of semiconductor material, with each layer acting as a separate device. The three layers are known as the emitter, base, and collector. The emitter and the collector are typically made out of the same type of material, while the base is usually made of a different material than the other two layers. The transistors of the same material carry out electronic current and voltage amplification. The BJT works by moving electrons between the collector and the emitter in a controlled manner, allowing for current and voltage amplification.
The ZTX776STOB transistor is a single BJT type and works by using electrons to move between the base and collector to amplify the current and voltage signals. This transistor is an NPN type, meaning that the Base is connected to the negative voltage, the Collector to the positive voltage, and the Emitter connected to ground. When a voltage is applied to the base, electrons move from the Collector to the Emitter; this process then creates an amplified output signal at the Collector. The ZTX776STOB can handle up to 1 A of current, with a voltage range of up to 80 V. This makes it particularly well-suited for applications requiring high current gain, low distortion and wide operating temperature and voltage ranges.
The ZTX776STOB transistor is well-suited for applications in audio, power supplies and servo control. The low distortion and low input capacitance make it particularly well-suited for high fidelity audio systems, while the high current gain and wide range make it a great choice for power handling and servo control applications. This device is also available in To-220 and TO-252 packages, allowing for convenient integration into most circuits or systems.
The ZTX776STOB transistor is a single-type bipolar junction transistor from STMicroelectronics. It is well-suited for general-purpose applications, including audio, power supplies, and servo control. It has a collector current rating of 1 A, a hFE of 50-100 at Ic=500 mA and VCE=4.5 V, and a Collector–Emitter voltage of 80 V, making it suitable for a variety of applications. This device is an NPN type and works by using electrons to move between the base and collector to amplify the current and voltage signals.
The specific data is subject to PDF, and the above content is for reference
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