Allicdata Part #: | ZTX955STZ-ND |
Manufacturer Part#: |
ZTX955STZ |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 140V 3A E-LINE |
More Detail: | Bipolar (BJT) Transistor PNP 140V 3A 110MHz 1.2W T... |
DataSheet: | ZTX955STZ Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.34442 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 140V |
Vce Saturation (Max) @ Ib, Ic: | 330mV @ 300mA, 3A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 5V |
Power - Max: | 1.2W |
Frequency - Transition: | 110MHz |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | E-Line-3, Formed Leads |
Supplier Device Package: | E-Line (TO-92 compatible) |
Base Part Number: | ZTX955 |
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The ZTX955STZ is a limited-production lateral NPN high power bipolar junction transistor (BJT). This BJT is based on a lateral structure that has high power and low signal-transistor ratings, making it ideal for high power applications including voltage amplification, signal oscillation, audio amplification, and motion control applications. It also has a lower power dissipation rating than FETs, and can be used in both switching and amplifier circuits. The ZTX955STZ is a dual-gate BJT with two gate terminals, one of which provides the signal input and the other providing the current output. This allows the transistor to respond to and control both the current and voltage levels in the circuit.
The ZTX955STZ has a maximum collector-emitter voltage of 250V, an input current of 1.4A, and a maximum collector power dissipation of 17W. It has a large collector-emitter saturation value of 20mV and an on-state resistance of 0.15Ω. It also has a high breakdown voltage of 300V and a current gain of 100 to 1000. This allows for efficient operation in a wide range of applications.
The working principle of the ZTX955STZ involves the movement of electrons from the base material to the collector material. This movement of electrons is controlled by the voltage applied to the gates of the transistor, which in turn controls the current flow through the transistor. When a base voltage is applied to the gates, electrons are drawn to the base material and then pushed out to the collector material. This process allows current to flow between the emitter and collector terminals. The current flowing through the transistor is determined by the ratio of the base voltage to the emitter voltage. This ratio is called the current gain or h parameter.
The ZTX955STZ is a high power BJT with a wide range of uses. It is commonly used in amplifier, audio, and motion control applications. Its dual-gate design provides excellent current control and its large collector-emitter saturation value and on-state resistance make it ideal for voltage amplification and signal oscillation. Its low power dissipation rating also makes it a good choice for applications where power consumption needs to be kept to a minimum. With its high current gain, the ZTX955STZ is an excellent choice for high power applications.
The specific data is subject to PDF, and the above content is for reference
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