ZTX968STOB Allicdata Electronics
Allicdata Part #:

ZTX968STOB-ND

Manufacturer Part#:

ZTX968STOB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 12V 4.5A E-LINE
More Detail: Bipolar (BJT) Transistor PNP 12V 4.5A 80MHz 1.58W ...
DataSheet: ZTX968STOB datasheetZTX968STOB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 4.5A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 1V
Power - Max: 1.58W
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX968
Description

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A ZTX968STOB transistor is a single polar transistors and part of a Bipolar Junction Transistors (BJT) family. This type of transistor is used in fields such as amplifiers, diode circuits, and power supplies. It is often referred to as a switching device because it can be used to turn on or off a current or voltage flow.

This type of transistor utilizes three terminals, with the Base (B) terminal serving as the control terminal, the Emitter (E) terminal driving the output, and the Collector (C) terminal receiving the output.

The ZTX968STOB transistor is comprised of three layers of doped semiconductor materials, which are referred to as an N-type silicon layer at the Emitter, a P-type silicon layer at the Base, and an N-type silicon layer at the Collector. The properties of these layers allow for a flow of electric current, when an external voltage is applied to the Base terminal.

When the Voltage applied to the Base reaches the Saturation Voltage (VCE(sat)), the transistor is said to be in full saturation, and thus a small change in current flows through the Base. As the collector current reaches a specified value, the junction potential decreases. This then causes a steep fall in the voltage across the collector-emitter terminals, thus causing the transistor to switch off.

Another important characteristic of the ZTX968STOB transistor is the Base-Emitter Voltage (VBE). This voltage is defined as the voltage required to be applied between the Base and Emitter terminals for the transistor to switch on. The higher the VBE, the higher the collector current through the transistor.

In terms of application fields, the ZTX968STOB can be used for audio amplifiers, voltage regulators, power supplies, digital circuits, and RF amplifiers among other fields. It can also be used in applications such as switching relays, or as part of high gain amplifiers. Furthermore, it can be used as part of a voltage divider.

In conclusion, the ZTX968STOB transistor is an important member of the Bipolar Junction Transistors family, and can be used in several areas such as amplifiers, relays, and voltage dividers, among others. It is especially useful in applications which require the transistor to switch on and off quickly.

The specific data is subject to PDF, and the above content is for reference

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