ZTX956STZ Allicdata Electronics

ZTX956STZ Discrete Semiconductor Products

Allicdata Part #:

ZTX956STZDITB-ND

Manufacturer Part#:

ZTX956STZ

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 200V 2A E-LINE
More Detail: Bipolar (BJT) Transistor PNP 200V 2A 110MHz 1.58W ...
DataSheet: ZTX956STZ datasheetZTX956STZ Datasheet/PDF
Quantity: 6000
2000 +: $ 0.34442
6000 +: $ 0.32720
10000 +: $ 0.31490
Stock 6000Can Ship Immediately
$ 0.39
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 200V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 400mA, 2A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Power - Max: 1.58W
Frequency - Transition: 110MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX956
Description

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The ZTX956STZ is a silicon PNP current control transistor. It is part of the family of transistors known as bipolar junction transistors (BJT). These transistors are often used for switching and for controlling high-current circuits. The ZTX956STZ is a single transistor, meaning that it only has three terminals.

The ZTX956STZ is designed to be used in medium power applications such as audio amplifiers and general purpose switching. It is designed to be used in a wide range of industry applications including lighting, automotive, electrical, electronic and telecommunication.

The ZTX956STZ has a maximum DC current gain of 950 with a 1 GHz bandwidth. It is also capable of high frequency switching with a high current gain of 80. It has an average collector-emitter saturation voltage of 400mV and an excellent switching speed of 1.2µs.

The working principle of the ZTX956STZ revovles around the use of a sandwich-like structure composed of two layers of p-type semiconductor material, commonly known as the base and the emitter. When a current is passed across both layers, this creates a voltage drop across the base-emitter layer. This is often referred to as the “on” state of the transistor. The current is then amplified by the collector.

When the transistor is off, the current that passes through it is very low. This is called the "off" state of the transistor. The current is then shut off, using either an external control or a built-in circuit. This is called the "cut off" state.

The ZTX956STZ also offers excellent thermal management with a low thermal resistance of 5℃/W. It is fabricated using an N-well process with an integrated JFET base terminal, providing the user with precise current control. The package of the ZTX956STZ is molded in epoxy plastic and is widely used in consumer electronics and telecommunications.

In conclusion, the ZTX956STZ is one of the most versatile single transistors available in the market today. It offers excellent high-frequency switching, current amplification and thermal management. It is suitable for a wide range of applications and is used in lighting, automotive, electrical, electronic and telecommunication industries.

The specific data is subject to PDF, and the above content is for reference

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