ZX5T3ZTA Allicdata Electronics

ZX5T3ZTA Discrete Semiconductor Products

Allicdata Part #:

ZX5T3ZTR-ND

Manufacturer Part#:

ZX5T3ZTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 40V 5.5A SOT-89
More Detail: Bipolar (BJT) Transistor PNP 40V 5.5A 152MHz 2.1W ...
DataSheet: ZX5T3ZTA datasheetZX5T3ZTA Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 5.5A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 185mV @ 550mA, 5.5A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 2.1W
Frequency - Transition: 152MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Base Part Number: ZX5T3
Description

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ZX5T3ZTA Application Field and Working Principle

ZX5T3ZTA is a single bipolar junction transistor (BJT), which is widely used in the electronics industry. It can be easily integrated into both digital and analog circuits, making it an ideal component in many applications.The ZX5T3ZTA has an identical form and package as the popular 2N3643 transistor. The ZX5T3ZTA uses a lightly doped collector-base junction to provide extremely low on-state current and power consumption. Due to its low-power consumption and wide frequency range, it is ideal for low-voltage and high-stability operations. Furthermore, its high current gain (hFE) and high gain-bandwidth product make it suitable for a wide range of low-noise applications. The ZX5T3ZTA is a three-terminal device comprising an emitter, a base, and a collector. The base is used to control the current running through the collector-emitter path and the transistor behaves like a pair of diodes. When the base-emitter junction is forward biased, the current flowing through the collector-emitter base will increase. When the base-emitter junction is reversed biased, the collector-emitter current will decrease. In this way, the voltage applied to the base can be used to control the current flowing through the collector and emitter. Due to its high gain-bandwidth product, the ZX5T3ZTA can be used in many different applications including amplifier circuits, switching circuits, motor controllers, inverters, power supplies and oscillators. Additionally, it can be used in amplifier outputs and power stages because of its ability to handle large currents. It is also suitable for use in high temperature and noise environments because of its temperature stability. Another interesting feature of the ZX5T3ZTA is its dielectric strength. It can withstand voltages up to 600 V, and its high voltage rating makes it suitable for use in applications such as automotive ignition systems, security systems, and high-voltage power supplies. Due to its low power consumption, small size, wide frequency range, and excellent stability, the ZX5T3ZTA is an ideal component for many different applications. Its high gain-bandwidth product, temperature stability, and high voltage rating make it an excellent choice for a wide range of designs.

The specific data is subject to PDF, and the above content is for reference

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