ZX5T851ZTA Discrete Semiconductor Products

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The ZX5T851ZTA is a single, lateral, NPN, high power transistor with high power gain, high reliability and low noise. It is well-suited for applications in the audio, video, RF and microwave fields. This device can be used for amplifying, switching, control and signal processing applications.

The ZX5T851ZTA is a high power lateral NPN Epitaxial transistor designed for use at voltages up to 45 V. This device is manufactured using very advanced silicon processing technology, including deep diffusions, single-layer processes and laser doping which ensure the highest device reliability. The device has a built-in preamplifier and a power amplifier which makes it ideal for high frequency applications.

In addition to its excellent power gain, low noise and high reliability, the ZX5T851ZTA has a wide range of applications due to its wide operating temperature range of -40 to +125 °C. It can be used in automotive, audio, video, RF and microwave systems.

The main application field of the ZX5T851ZTA is in high power amplifiers. It is suitable for applications such as linear or switching amplifiers or power control circuits which require high power gain and stability over a wide band of frequencies. Because of its high frequency capability, the ZX5T851ZTA can also be used in RF power amplifier circuits and in microwave systems. It can also be used in high power switching and control applications such as motor driving, relay control, variable gain amplifiers, current limiters, etc.

The working principle of the ZX5T851ZTA is based on the operation of a conventional NPN bipolar transistor. Here, a low voltage pulse is sent to the emitter, which causes electrons to be released and pushed into the collector. This movement of electrons increases the current in the collector, which is then amplified by the device’s internal circuitry and fed out of the collector as a larger voltage. This amplified current is then sent to the output, where it meets the load or performs the desired function. The entire process is dependent on the parameters, such as the voltage, current, and resistance of the device, which are all controllable and can be adjusted for different applications.

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