ZX5T955ZTA Discrete Semiconductor Products |
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Allicdata Part #: | ZX5T955ZTR-ND |
Manufacturer Part#: |
ZX5T955ZTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 140V 3A SOT-89 |
More Detail: | Bipolar (BJT) Transistor PNP 140V 3A 120MHz 2.1W S... |
DataSheet: | ZX5T955ZTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 140V |
Vce Saturation (Max) @ Ib, Ic: | 330mV @ 300mA, 3A |
Current - Collector Cutoff (Max): | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 5V |
Power - Max: | 2.1W |
Frequency - Transition: | 120MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | ZX5T955 |
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,The ZXT955ZTA is a single bipolar transistor, more commonly known as an NPN transistor. It is used in many applications such as amplification and signal switching and it is designed to be more efficient than its predecessor, the classic BJT. This transistor has several features that make it the ideal choice for a range of applications.
The ZXT955ZTA has a forward current of 800 mA and a maximum collector current of 500 mA. This allows it to handle large signal loads with ease and makes it suitable for use in applications such as audio amplifiers and signal switching. It also has a wide-range of operating temperatures, from -50°C to 125°C. This makes it ideal for use in harsh environments, such as those found in automotive applications. Furthermore, it has a much higher power rating than other transistors, with a maximum collector dissipation of 600 mW. These features ensure the ZXT955ZTA can handle the toughest loads and make it a great choice for many applications.
In terms of construction, the ZXT955ZTA has a single, NPN, structure constructed as an epitaxial planar BJT. It consists of two highly doped layers, the emitter and collector, separated by a more lightly doped base layer. The emitter is connected to the negative terminal of the power supply, while the collector is connected to the positive terminal. The base is the input signal and is connected to the control circuit. When a forward biased is applied, the transistor conducts current and produces an amplified output signal. When a reverse biased is applied, the transistor is cut off and no current flows through it.
The ZXT955ZTA performs well in many different applications, due to its high efficiency, wide-temperature range, and higher-than-average power rating. It is a popular choice for use in audio amplifiers, signal switching, and automotive applications. Its epitaxial planar design allows it to handle large signal loads with ease and its wide-range of operating temperatures make it suitable for use in harsh conditions. Additionally, its high power rating allows it to handle larger loads with ease, and its efficiency ensures it will be an economical and reliable choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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