ZX5T869ZTA Discrete Semiconductor Products |
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Allicdata Part #: | ZX5T869ZTR-ND |
Manufacturer Part#: |
ZX5T869ZTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 25V 5.5A SOT-89 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 5.5A 150MHz 2.1W ... |
DataSheet: | ZX5T869ZTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5.5A |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 150mA, 6.5A |
Current - Collector Cutoff (Max): | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 1A, 1V |
Power - Max: | 2.1W |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | ZX5T869 |
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Bipolar junction transistors (BJT) are widely used in electronics. The ZX5T869ZTA is a single BJT, which can be used in wide range of applications due to its superior performance. This article will discuss the application fields and working principles of ZX5T869ZTA.
The ZX5T869ZTA can be used in a variety of applications including general-purpose amplification and switching for audio, radio-frequency (RF) systems, and analog circuits. It can also be used for controlling power to loads, and for sensing and controlling temperature in various industrial applications. It is also suitable for a variety of power management applications, especially in solar and fuel cell inverters.
The ZX5T869ZTA is a NPN type BJT, meaning that it has three terminals: the base (B), the collector (C), and the emitter (E). The base-emitter junction is a P-N junction diode, used to control the flow of current between the collector and the emitter. The current flow from collector to emitter is controlled by current flow from the base to the emitter. This is known as the common-emitter configuration. When a small current flows through the base-emitter diode, a larger current is allowed to flow through the collector-emitter junction due to the current amplification capability of BJT.
The working principle of the ZX5T869ZTA is quite simple. When a base current enters the base-emitter junction, electrons and holes of opposite types are injected into the collector-emitter region, which then acts as a current amplifier. The base current amplifies the collector current as it passes through the collector-emitter junction, thus allowing the controlled flow of current from the collector to the emitter. The larger the base current, the larger the collector current, thus allowing greater control over the output current.
The ZX5T869ZTA can be used for a wide range of applications due to its superior performance. Its rather low VCE (SAT) (collector-emitter saturation voltage) means that it can be used in a wide range of switching and amplification applications. Furthermore, its low VCBO (collector-base breakdown voltage) allows for a wide range of sensing applications for power management. Moreover, its rather high maximum current gain (hFE) means that it can be used in a variety of temperature-sensing applications.
In conclusion, the ZX5T869ZTA is a single BJT with a wide range of applications and excellent performance. Its application fields include general-purpose amplification and switching, power management, and temperature sensing. Moreover, it works based on the controller current injected into the base-emitter junction, which then amplifies the collector current, thus allowing the controlled flow of current from the collector to the emitter.
The specific data is subject to PDF, and the above content is for reference
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