ZXMHC10A07N8TC Discrete Semiconductor Products |
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Allicdata Part #: | ZXMHC10A07N8DITR-ND |
Manufacturer Part#: |
ZXMHC10A07N8TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N/2P-CH 100V 8-SOIC |
More Detail: | Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V 8... |
DataSheet: | ZXMHC10A07N8TC Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Base Part Number: | ZXMHC10A07 |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 870mW |
Input Capacitance (Ciss) (Max) @ Vds: | 138pF @ 60V |
Gate Charge (Qg) (Max) @ Vgs: | 2.9nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 1.5A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 800mA, 680mA |
Drain to Source Voltage (Vdss): | 100V |
FET Feature: | Standard |
FET Type: | 2 N and 2 P-Channel (H-Bridge) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZXMHC10A07N8TC is a complex and multifunctional electronic device, with intricate inner workings. As a type of transistor, it belongs to the family of Field Effect Transistors (FETs), and is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) array. To provide quick and efficient operation, MOSFETs simplify the control of electric current, typically compared to the usage of bipolar transistors. The ZXMHC10A07N8TC is a MOSFET array that is designed for a wide range of applications, such as frequency, voltage and current control, data conversion, and switching.
The structure of the ZXMHC10A07N8TC is simple yet highly effective. A gate terminal is connected to a resistor, which connects to the gate. The gate terminal is encased in a plastic package to provide proper insulation. From there, the resistor passes to the semi-conductive region and then to the channel, where it is connected to an external power supply. The output of the MOSFET array is connected to an output terminal, which is then sent to the input terminal.
The structure of the MOSFET array partially determines its working principle. When a voltage difference is applied to the gate terminal, it creates an electric field across the semi-conductive region, or the junction between the resistor and the channel. This field induces a change in the current between the source and the drain, which is referred to as the “on” current. The range of the “on” current is controlled by the resistance of the resistor, which can be adjusted by the input voltage.
The ZXMHC10A07N8TC is a versatile MOSFET array that offers a range of advantages. The device is suitable for both digital and analog applications, and can be used for a variety of purposes. It is capable of handling high frequency switching and amplification, while consuming low power. Additionally, the array is composed of multiple MOSFETs, which are known for their high switching speeds and low noise levels.
Due to its high performance and low power consumption, the ZXMHC10A07N8TC is ideal for use in data conversion, frequence control, and other high frequency applications. For example, it can be used as the driving device in a power amplifier circuit to control the gain of the amplifier. In addition, the use of MOSFET arrays can help reduce losses, since MOSFETs require low gate voltages.
In conclusion, the ZXMHC10A07N8TC is an advanced MOSFET array designed for a variety of uses, from data conversion to frequency control. It is an efficient device that offers high performance and low power consumption, which makes it suitable for a wide range of applications. The array is composed of multiple MOSFETs, providing high switching speeds and low noise levels. The working principle of the device involves the induction of an electric field, which can be controlled by the input voltage.
The specific data is subject to PDF, and the above content is for reference
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