ZXMHC3A01N8TC Discrete Semiconductor Products |
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Allicdata Part #: | ZXMHC3A01N8DITR-ND |
Manufacturer Part#: |
ZXMHC3A01N8TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N/2P-CH 30V 8-SOIC |
More Detail: | Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 2.... |
DataSheet: | ZXMHC3A01N8TC Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | ZXMHC3A01 |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 870mW |
Input Capacitance (Ciss) (Max) @ Vds: | 190pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 3.9nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 2.5A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.17A, 1.64A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N and 2 P-Channel (H-Bridge) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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ZXMHC3A01N8TC Application Field and Working Principle
ZXMHC3A01N8TC is a dual-gate MOSFET transistor array, used in telecommunications and computer systems. It is a four-terminal device, composed of two MOSFET transistors. It is ideal for applications requiring a high degree of isolation between the drain, gate and source terminals. This transistor array is ideally suited for digital signal processing and radio frequency applications due to its low on-resistance, high input impedance, reverse-biased safe-operating area, and robust design.
Application Fields
The ZXMHC3A01N8TC is primarily used in applications requiring digital signal processing and radio frequency (RF) applications. These include radio receivers and transmitters, automotive safe-driving systems, transistor logic, and other similar industrial and telecommunication systems. It has a wide range of applications from low-power and medium-power frequency processing to high-power RF-frequency applications.
Working Principle
The ZXMHC3A01N8TC is composed of two MOSFET transistors. Each transistor is connected to its associated gate. These transistors are configured as a source-follower pair, which means that the source voltage follows the gate voltage. When a voltage is applied to the gate, the voltage of the source will shift accordingly. This shift can be adjusted by a change in the gate voltage. This arrangement enables high input impedance and low output impedance. The input and output resistance can be adjusted depending on the transistor type used.
Advantages of ZXMHC3A01N8TC
The ZXMHC3A01N8TC offers numerous advantages over discrete MOSFETs, including:
- Low on-resistance, allowing for improved power efficiency for a wide variety of applications
- High input impedance allows for improved signal fidelity
- Reverse-biased safe-operating area enhances device reliability
- Robust design allows for operation in a wide range of temperatures, voltages and frequencies
- Low cost compared to discrete MOSFETs
Conclusion
The ZXMHC3A01N8TC is an ideal choice for applications requiring a high degree of isolation between source, gate and drain terminals and improved signal fidelity, such as radio receivers, logic systems and RF applications. Its low on-resistance, high input impedance and robust design allow for improved power efficiency and device reliability, while still keeping the cost from increasing by utilizing the array\'s multiple transistors.
The specific data is subject to PDF, and the above content is for reference
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