ZXMHC3A01N8TC Allicdata Electronics

ZXMHC3A01N8TC Discrete Semiconductor Products

Allicdata Part #:

ZXMHC3A01N8DITR-ND

Manufacturer Part#:

ZXMHC3A01N8TC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N/2P-CH 30V 8-SOIC
More Detail: Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 2....
DataSheet: ZXMHC3A01N8TC datasheetZXMHC3A01N8TC Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: ZXMHC3A01
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 870mW
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.17A, 1.64A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N and 2 P-Channel (H-Bridge)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

ZXMHC3A01N8TC Application Field and Working Principle

ZXMHC3A01N8TC is a dual-gate MOSFET transistor array, used in telecommunications and computer systems. It is a four-terminal device, composed of two MOSFET transistors. It is ideal for applications requiring a high degree of isolation between the drain, gate and source terminals. This transistor array is ideally suited for digital signal processing and radio frequency applications due to its low on-resistance, high input impedance, reverse-biased safe-operating area, and robust design.

Application Fields

The ZXMHC3A01N8TC is primarily used in applications requiring digital signal processing and radio frequency (RF) applications. These include radio receivers and transmitters, automotive safe-driving systems, transistor logic, and other similar industrial and telecommunication systems. It has a wide range of applications from low-power and medium-power frequency processing to high-power RF-frequency applications.

Working Principle

The ZXMHC3A01N8TC is composed of two MOSFET transistors. Each transistor is connected to its associated gate. These transistors are configured as a source-follower pair, which means that the source voltage follows the gate voltage. When a voltage is applied to the gate, the voltage of the source will shift accordingly. This shift can be adjusted by a change in the gate voltage. This arrangement enables high input impedance and low output impedance. The input and output resistance can be adjusted depending on the transistor type used.

Advantages of ZXMHC3A01N8TC

The ZXMHC3A01N8TC offers numerous advantages over discrete MOSFETs, including:

  • Low on-resistance, allowing for improved power efficiency for a wide variety of applications
  • High input impedance allows for improved signal fidelity
  • Reverse-biased safe-operating area enhances device reliability
  • Robust design allows for operation in a wide range of temperatures, voltages and frequencies
  • Low cost compared to discrete MOSFETs

Conclusion

The ZXMHC3A01N8TC is an ideal choice for applications requiring a high degree of isolation between source, gate and drain terminals and improved signal fidelity, such as radio receivers, logic systems and RF applications. Its low on-resistance, high input impedance and robust design allow for improved power efficiency and device reliability, while still keeping the cost from increasing by utilizing the array\'s multiple transistors.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "ZXMH" Included word is 8
Part Number Manufacturer Price Quantity Description
ZXMHC6A07N8TC Diodes Incor... 0.34 $ 32500 MOSFET 2N/2P-CH 60V 8-SOI...
ZXMHC10A07N8TC Diodes Incor... -- 2500 MOSFET 2N/2P-CH 100V 8-SO...
ZXMHC3A01T8TA Diodes Incor... -- 1000 MOSFET 2N/2P-CH 30V 2.7A/...
ZXMHN6A07T8TA Diodes Incor... -- 1000 MOSFET 4N-CH 60V 1.4A SM8...
ZXMHC10A07T8TA Diodes Incor... -- 9000 MOSFET 2N/2P-CH 100V 1A/0...
ZXMHC6A07T8TA Diodes Incor... -- 1000 MOSFET 2N/2P-CH 60V SM8Mo...
ZXMHC3F381N8TC Diodes Incor... -- 1000 MOSFET 2N/2P-CH 30V 8-SOI...
ZXMHC3A01N8TC Diodes Incor... -- 1000 MOSFET 2N/2P-CH 30V 8-SOI...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics