Automotive gate driver - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
MT28FW512ABA1HJ S-0AAT-ND	MT28FW512ABA1HJ S-0AAT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 105ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	1000 Order	1+: $0
DS2431P-A1+-ND	DS2431P-A1+	Maxim Integrated	View more Series: Automotive, AEC-Q100 Packaging: Tube Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (256 x 4) Access Time: 2s Memory Interface: 1-Wire Operating Temperature: -40C ~ 125C (TA) Mounting Type: Surface Mount Package / Case: 6-LSOJ (0.148", 3.76mm Width) Supplier Device Package: 6-TSOC Base Part Number: DS2431	83 Order	1+: $2.0664 10+: $1.9606 25+: $1.8126 50+: $1.7219 100+: $1.5545 250+: $1.4768 1000+: $1.1038
CAV93C46YE-GT3- ND	CAV93C46YE-GT3	ON Semiconductor	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Clock Frequency: 2MHz Memory Interface: SPI Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40C ~ 125C (TA)	1000 Order	3000+: $0.1991
S29GL256N11FFA0 13-ND	S29GL256N11FFA0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1600+: $7.1511
S34MS08G201BHB0 03-ND	S34MS08G201BHB0 03	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, MS-2 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2300+: $9.8839
MT28EW01GABA1HP C-0AAT-ND	MT28EW01GABA1HP C-0AAT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8, 64M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 105ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LBGA (11x13)	1000 Order	--
MT29AZ5A3CHHWD- 18AAT.84F-ND	MT29AZ5A3CHHWD- 18AAT.84F	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, Mobile LPDRAM Memory Size: 4Gb (512M x 8)(NAND), 8Gb (512M x 16)(LPDDR2) Clock Frequency: 533MHz Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	1+: $0
S34MS01G200TFB0 00-ND	S34MS01G200TFB0 00	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, MS-2 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	96+: $3.3605
S71KL512SC0BHB0 03-ND	S71KL512SC0BHB0 03	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, HyperFlash + HyperRAM KL Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH, DRAM Memory Size: 512Mbit Flash, 64Mbit RAM Clock Frequency: 100MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2500+: $5.42
S26KS512SDPBHA0 23-ND	S26KS512SDPBHA0 23	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, HyperFlash KS Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Clock Frequency: 166MHz Access Time: 96ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2500+: $5.9819
IS26KL512S-DABL A300-ND	IS26KL512S-DABL A300	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, HyperFlash KL Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Clock Frequency: 100MHz Access Time: 96ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 125C (TA)	1000 Order	338+: $8.9005
MT28FW512ABA1HP C-0AAT-ND	MT28FW512ABA1HP C-0AAT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 105ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LBGA (11x13)	1000 Order	1+: $0
MT29F4G08ABAFAW P-AATES:F-ND	MT29F4G08ABAFAW P-AATES:F	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TC)	1000 Order	1+: $0
S25FL064LABMFA0 13-ND	S25FL064LABMFA0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL-L Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Clock Frequency: 108MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	--
S29GL064N90TFA0 10-ND	S29GL064N90TFA0 10	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Write Cycle Time - Word, Page: 90ns Access Time: 90ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	91+: $3.1624
MT28FW01GABA1LP C-0AAT-ND	MT28FW01GABA1LP C-0AAT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (64M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 105ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LBGA (11x13)	1000 Order	1+: $0
S25FL064LABMFB0 11-ND	S25FL064LABMFB0 11	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL-L Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Clock Frequency: 108MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	455+: $1.631
S25FS256SDSBHB2 03-ND	S25FS256SDSBHB2 03	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FS-S Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Clock Frequency: 80MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2500+: $2.5919
AS4C256M8D3LA-1 2BAN-ND	AS4C256M8D3LA-1 2BAN	Alliance Memory, Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tray Part Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (256M x 8) Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Memory Interface: Parallel Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40C ~ 105C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-FBGA (10.5x8)	1000 Order	1+: $0
MT29F8G01ADAFD1 2-AATES:F-ND	MT29F8G01ADAFD1 2-AATES:F	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (8G x 1) Memory Interface: SPI Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TC)	1000 Order	1+: $0
S34ML01G204TFA0 13-ND	S34ML01G204TFA0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, ML-2 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (64M x 16) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1000+: $2.9991
CAV25512HU5E-GT 3-ND	CAV25512HU5E-GT 3	ON Semiconductor	View more Series: Automotive, AEC-Q100 Part Status: Not For New Designs Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40C ~ 125C (TA)	1000 Order	3000+: $1.2198
MT25QU128ABB8E1 2-0AUT-ND	MT25QU128ABB8E1 2-0AUT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Memory Interface: SPI Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	1000 Order	1+: $0
S25FL132K0XBHB0 20-ND	S25FL132K0XBHB0 20	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL1-K Part Status: Last Time Buy Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Clock Frequency: 108MHz Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	338+: $1.1928
S25FL128LAGBHB0 33-ND	S25FL128LAGBHB0 33	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL-L Part Status: Preliminary Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Clock Frequency: 133MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	1+: $0
S25FL128LAGBHB0 20-ND	S25FL128LAGBHB0 20	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL-L Part Status: Preliminary Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Clock Frequency: 133MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	1+: $0
1450-1256-ND	AS4C4M16SA-6BAN	Alliance Memory, Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tray Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (4M x 16) Clock Frequency: 166MHz Write Cycle Time - Word, Page: 2ns Access Time: 5.4ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	547 Order	--
S34MS02G104BHB0 13-ND	S34MS02G104BHB0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, MS-1 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (128M x 16) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2300+: $5.0357
MT25QU512ABB8E1 2-0AUT-ND	MT25QU512ABB8E1 2-0AUT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Memory Interface: SPI Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40C ~ 125C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	1000 Order	1+: $0
S29GL064S80DHB0 23-ND	S29GL064S80DHB0 23	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-S Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 80ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2200+: $2.3143
S25FL116K0XMFB0 43-ND	S25FL116K0XMFB0 43	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL1-K Part Status: Last Time Buy Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8) Clock Frequency: 108MHz Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	3600+: $0.6742
S25FL132K0XBHB0 23-ND	S25FL132K0XBHB0 23	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL1-K Part Status: Last Time Buy Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Clock Frequency: 108MHz Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2500+: $1.0835
S25FS064SDSMFM0 13-ND	S25FS064SDSMFM0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FS-S Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Clock Frequency: 80MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40C ~ 125C (TA)	1000 Order	2100+: $1.7778
MT29F8G01ADBFD1 2-AATES:F-ND	MT29F8G01ADBFD1 2-AATES:F	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (8G x 1) Memory Interface: SPI Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TC)	1000 Order	1+: $0
S25FL116K0XMFB0 41-ND	S25FL116K0XMFB0 41	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL1-K Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8) Clock Frequency: 108MHz Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	485+: $0.7546
S34MS01G200BHB0 03-ND	S34MS01G200BHB0 03	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, MS-2 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2300+: $2.6578
S34ML02G104BHB0 13-ND	S34ML02G104BHB0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, ML-1 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (128M x 16) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2300+: $5.5366
S29GL512N10FFA0 10-ND	S29GL512N10FFA0 10	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8, 32M x 16) Write Cycle Time - Word, Page: 100ns Access Time: 100ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	180+: $10.4784
428-4270-ND	S34ML08G201BHA0 00	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, ML-2 Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9)	210 Order	--
MT28GU256AAA2EG C-0SIT-ND	MT28GU256AAA2EG C-0SIT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tray Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Clock Frequency: 133MHz Access Time: 96ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-TBGA (10x8)	1000 Order	1+: $0

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