S34MS02G104BHB013 Allicdata Electronics
Allicdata Part #:

S34MS02G104BHB013-ND

Manufacturer Part#:

S34MS02G104BHB013

Price: $ 5.54
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL
More Detail: FLASH - NAND Memory IC 2Gb (128M x 16) Parallel 4...
DataSheet: S34MS02G104BHB013 datasheetS34MS02G104BHB013 Datasheet/PDF
Quantity: 1000
2300 +: $ 5.03567
Stock 1000Can Ship Immediately
$ 5.54
Specifications
Series: Automotive, AEC-Q100, MS-1
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (128M x 16)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Description

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The S34MS02G104BHB013 is a Memory module. It is basically a NAND flash memory solution that should be used mainly for industrial and communication applications. The S34MS02G104BHB013 is capable of offering high data rates with excellent program and erase abilities and is very reliable in terms of both power and temperature.

The application field of the S34MS02G104BHB013 includes industrial automation, automotive, medical equipment, test & measurement and consumer. In industrial automation, the NAND flash technology allows for fast data storage in numerous applications such as automated robotic arms and other data storage needs.

In automotive, the S34MS02G104BHB013 can be used in modern semi-autonomous cars for data storage needs such as navigation and computer vision algorithms. It can also be used in electric vehicles, as the NAND flash needs no power to retain data and therefore it helps to extend battery life.

In the medical field, the S34MS02G104BHB013 can be used for data storage needs such as telemedicine and electronic health records. In test and measurement, the NAND flash technology can be utilized for quick read and write operations, which are crucial for product testing.

The working principle of the S34MS02G104BHB013 is based on the idea of storing charge in floating gate transistors. To store a bit, the gate is charged with an electrical charge, in this case, it will be either a 0 or a 1 depending on the desired value. When the write signal is applied, the charge is stored in the gate and this state is maintained even in the absence of an applied electrical field. To read the data, the charge is applied in opposite polarity so that the amount of charge stored in the gate can be sensed. If the stored charge is more than the threshold, then it will be interpreted as a 1 and if it is less, then it will be interpreted as a 0.

In conclusion, the S34MS02G104BHB013 is a reliable NAND flash memory solution. It can offer high data rates with excellent program and erase capabilities. It can be used in numerous applications such as industrial automation, automotive, medical equipment, test & measurement and consumer. Its working principle is based on the concept of storing electrical charge in floating gate transistors.

The specific data is subject to PDF, and the above content is for reference

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