AS4C4M16SA-6BAN Allicdata Electronics
Allicdata Part #:

1450-1256-ND

Manufacturer Part#:

AS4C4M16SA-6BAN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 64M PARALLEL 54TFBGA
More Detail: SDRAM Memory IC 64Mb (4M x 16) Parallel 166MHz 5.4...
DataSheet: AS4C4M16SA-6BAN datasheetAS4C4M16SA-6BAN Datasheet/PDF
Quantity: 547
Stock 547Can Ship Immediately
Specifications
Series: Automotive, AEC-Q100
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)
Description

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Introduction

AS4C4M16SA-6BAN is a flash memory device developed by Microchip. It is a 16Mbit synchronous dual-data-rate (DDR) 3-2-3 read-write memory. It is particularly useful for applications that require fast random read and write speeds and low power consumption.

Specifications

AS4C4M16SA-6BAN is an 1.8V device with a maximum speed of 333MHz, and it supports durations of between 133ns and 333n. It provides an 8-bit bus interface with a host interface of 8 bits. This memory device has an address capability of 28 bits, making it suitable for applications requiring large amounts of memory. It has a minimum write endurance of 10,000 cycles and a maximum retention time of 10 years, giving it great reliability.

Applications

AS4C4M16SA-6BAN is suitable for applications such as enterprise storage, network storage, integrated-circuit content-addressable memory, automotive, industrial and automotive control, gaming and graphics, computer operating systems, and more. It is also used for industrial memory, embedded memory, and server memory.

Working Principle

AS4C4M16SA-6BAN operates with a synchronous dual-data-rate (DDR) 3-2-3 read-write system. The device uses a three stage process to read and write data: precharge, access and cycle. During precharge the active data will be pre-fetched and stored in the sense amplifier. During access the data will be read or written while it is stored in the sense amplifier. During the cycle, data will be written onto the chip and read back again.

The device transfers data in two distinct phases - read and write. During the read phase, address, control and data signals are presented to the device. When the data is read back from the device, it will be compared with the original data to ensure that it is correct. Once the data has been read and verified, the read cycle is complete.

During the write cycle, data is presented to the device via the address and control signals. The device will then store the data and verify it against the original data. Once the data has been verified, the write cycle is complete and the device will move on to the next address on the memory.

Conclusion

AS4C4M16SA-6BAN is a Flash Memory Device developed by Microchip. It is particularly useful for applications that require fast random read and write speeds and low power consumption. It operates with a synchronous DDR 3-2-3 read-write system and is suitable for various applications such as enterprise storage, network storage, industrial memory, embedded memory and server memory. With its read and write cycles, it ensures reliable, efficient data transfer.

The specific data is subject to PDF, and the above content is for reference

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