Allicdata Part #: | 1450-1256-ND |
Manufacturer Part#: |
AS4C4M16SA-6BAN |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Alliance Memory, Inc. |
Short Description: | IC DRAM 64M PARALLEL 54TFBGA |
More Detail: | SDRAM Memory IC 64Mb (4M x 16) Parallel 166MHz 5.4... |
DataSheet: | AS4C4M16SA-6BAN Datasheet/PDF |
Quantity: | 547 |
Series: | Automotive, AEC-Q100 |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 64Mb (4M x 16) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | 2ns |
Access Time: | 5.4ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 54-TFBGA |
Supplier Device Package: | 54-TFBGA (8x8) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
AS4C4M16SA-6BAN is a flash memory device developed by Microchip. It is a 16Mbit synchronous dual-data-rate (DDR) 3-2-3 read-write memory. It is particularly useful for applications that require fast random read and write speeds and low power consumption.
Specifications
AS4C4M16SA-6BAN is an 1.8V device with a maximum speed of 333MHz, and it supports durations of between 133ns and 333n. It provides an 8-bit bus interface with a host interface of 8 bits. This memory device has an address capability of 28 bits, making it suitable for applications requiring large amounts of memory. It has a minimum write endurance of 10,000 cycles and a maximum retention time of 10 years, giving it great reliability.
Applications
AS4C4M16SA-6BAN is suitable for applications such as enterprise storage, network storage, integrated-circuit content-addressable memory, automotive, industrial and automotive control, gaming and graphics, computer operating systems, and more. It is also used for industrial memory, embedded memory, and server memory.
Working Principle
AS4C4M16SA-6BAN operates with a synchronous dual-data-rate (DDR) 3-2-3 read-write system. The device uses a three stage process to read and write data: precharge, access and cycle. During precharge the active data will be pre-fetched and stored in the sense amplifier. During access the data will be read or written while it is stored in the sense amplifier. During the cycle, data will be written onto the chip and read back again.
The device transfers data in two distinct phases - read and write. During the read phase, address, control and data signals are presented to the device. When the data is read back from the device, it will be compared with the original data to ensure that it is correct. Once the data has been read and verified, the read cycle is complete.
During the write cycle, data is presented to the device via the address and control signals. The device will then store the data and verify it against the original data. Once the data has been verified, the write cycle is complete and the device will move on to the next address on the memory.
Conclusion
AS4C4M16SA-6BAN is a Flash Memory Device developed by Microchip. It is particularly useful for applications that require fast random read and write speeds and low power consumption. It operates with a synchronous DDR 3-2-3 read-write system and is suitable for various applications such as enterprise storage, network storage, industrial memory, embedded memory and server memory. With its read and write cycles, it ensures reliable, efficient data transfer.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
AS4C1M16S-6TCN | Alliance Mem... | 1.24 $ | 65 | IC DRAM 16M PARALLEL 50TS... |
AS4C4M16SA-7B2CN | Alliance Mem... | 1.53 $ | 348 | IC DRAM 64M PARALLEL 60FB... |
AS4C2M32D1A-5BCN | Alliance Mem... | 2.0 $ | 88 | IC DRAM 64M PARALLEL 144L... |
AS4C32M8SA-7TCN | Alliance Mem... | 2.51 $ | 82 | IC DRAM 256M PARALLEL 54T... |
AS4C32M8SA-6TIN | Alliance Mem... | 2.74 $ | 75 | IC DRAM 256M PARALLEL 54T... |
AS4C16M32MSA-6BIN | Alliance Mem... | 4.2 $ | 92 | IC DRAM 512M PARALLEL 90F... |
AS4C256M16D3B-12BAN | Alliance Mem... | 9.67 $ | 39 | IC DRAM 4G PARALLEL 96FBG... |
AS4C256M16D3LB-12BAN | Alliance Mem... | 9.67 $ | 216 | IC DRAM 4G PARALLEL 96FBG... |
AS4C128M8D1-6TIN | Alliance Mem... | 31.07 $ | 10 | IC DRAM 1G PARALLEL 66TSO... |
AS4C16M16D1A-5TIN | Alliance Mem... | -- | 38 | IC DRAM 256M PARALLEL 66T... |
AS4C64M16D3A-12BCN | Alliance Mem... | -- | 39 | IC DRAM 1G PARALLEL 96FBG... |
AS4C128M8D3A-12BCN | Alliance Mem... | 3.33 $ | 85 | IC DRAM 1G PARALLEL 78FBG... |
AS4C64M16D3LA-12BCN | Alliance Mem... | 3.4 $ | 83 | IC DRAM 1G PARALLEL 96FBG... |
AS4C8M32S-7TCN | Alliance Mem... | 4.27 $ | 82 | IC DRAM 256M PARALLEL 86T... |
AS4C128M16D3A-12BCN | Alliance Mem... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96FBG... |
AS4C128M16D3LA-12BCN | Alliance Mem... | 4.8 $ | 50 | IC DRAM 2G PARALLEL 96FBG... |
AS4C512M8D3-12BAN | Alliance Mem... | 8.67 $ | 42 | IC DRAM 4G PARALLEL 78FBG... |
AS4C64M16D2-25BAN | Alliance Mem... | 4.84 $ | 195 | IC DRAM 1G PARALLEL 84FBG... |
AS4C64M16D3-12BAN | Alliance Mem... | 4.91 $ | 162 | IC DRAM 1G PARALLEL 96FBG... |
AS4C128M16D3LA-12BIN | Alliance Mem... | -- | 1000 | IC DRAM 2G PARALLEL 96FBG... |
AS4C128M16D3LA-12BAN | Alliance Mem... | 5.96 $ | 237 | IC DRAM 2G PARALLEL 96FBG... |
AS4C512M8D3L-12BCN | Alliance Mem... | 6.28 $ | 198 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3LA-12BCN | Alliance Mem... | 7.57 $ | 220 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3A-12BCN | Alliance Mem... | 7.57 $ | 190 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3A-12BAN | Alliance Mem... | 9.42 $ | 216 | IC DRAM 4G PARALLEL 78FBG... |
AS4C256M16D3A-12BAN | Alliance Mem... | 9.67 $ | 253 | IC DRAM 4G PARALLEL 96FBG... |
AS4C32M16SB-7TCNTR | Alliance Mem... | 6.51 $ | 1000 | IC DRAM 512M PARALLEL 54T... |
AS4C128M8D2-25BIN | Alliance Mem... | 4.2 $ | 1358 | IC DRAM 1G PARALLEL 60FBG... |
AS4C1M16S-7TCN | Alliance Mem... | -- | 1380 | IC DRAM 16M PARALLEL 50TS... |
AS4C1M16S-6TIN | Alliance Mem... | 1.48 $ | 385 | IC DRAM 16M PARALLEL 50TS... |
AS4C4M16SA-6TCN | Alliance Mem... | -- | 58 | IC DRAM 64M PARALLEL 54TS... |
AS4C4M16SA-7BCN | Alliance Mem... | 1.68 $ | 331 | IC DRAM 64M PARALLEL 54TF... |
AS4C64M8D1-5TIN | Alliance Mem... | 3.03 $ | 60 | IC DRAM 512M PARALLEL 66T... |
AS4C8M16SA-6BIN | Alliance Mem... | 3.18 $ | 391 | IC DRAM 128M PARALLEL 54T... |
AS4C64M16D1A-6TIN | Alliance Mem... | 16.52 $ | 94 | IC DRAM 1G PARALLEL 66TSO... |
AS4C4M32SA-6TCN | Alliance Mem... | 2.66 $ | 33 | IC DRAM 128M PARALLEL 86T... |
AS4C2M32SA-6TIN | Alliance Mem... | 2.88 $ | 97 | IC DRAM 64M PARALLEL 86TS... |
AS4C64M8D2-25BAN | Alliance Mem... | 4.34 $ | 48 | IC DRAM 512M PARALLEL 60F... |
AS4C2M32S-6TIN | Alliance Mem... | 2.58 $ | 10097 | IC DRAM 64M PARALLEL 86TS... |
AS4C128M8D3LA-12BCN | Alliance Mem... | 3.47 $ | 242 | IC DRAM 1G PARALLEL 78FBG... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...