S26KS512SDPBHA023

Series:	Automotive, AEC-Q100, HyperFlash™ KS
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Mb (64M x 8)
Clock Frequency:	166MHz
Write Cycle Time - Word, Page:	--
Access Time:	96ns
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	-40°C ~ 105°C (TA)

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Introduction: S26KS512SDPBHA023 MemoryThe S26KS512SDPBHA023 is one of the most popular memory devices used in the electronics industry and has been widely adopted by leading edge manufacturers. The S26KS512SDPBHA023 is a high-speed serial interface device that offers a wide range of features designed to meet the demands of modern embedded applications.Application Field and Working PrincipleThe device is a dual-channel, 5V operated, low power (1.8V) device tailored for speeding-up tasks in microcontroller and embedded applications. This device is designed to be a reliable and high-speed memory device for applications such as emulated microcontrollers, memory mapping, and data buffer.The S26KS512SDPBHA023 is used in the automotive, telecommunication, consumer electronics, and other industrial applications. The device is well-suited for use in high-performance memory systems and Embedded Control Systems (ECS) as it offers high write operations/s/bit rates and low-power consumption.Working principle of S26KS512SDPBHA023 works on the LOW ACTIVE BREAKDOWN principle. This memory device uses a low breakdown voltage, of about 4–5 V, for the transistor to keep the operating power requirement low. After the user data is written, the device will internally breakdown the voltage to maintain the memory state. When a read command is issued, the device will internally time multiplex the user data, converting it into a 5V signal that can be read out.The device also supports clock control and functionality such as write and read commands. The following commands can be used to read or write information into or out of the device’s memory:• Read Command: The read command will request the address from the memory addr bus and will activate the internal low breakdown voltage.• Write Command: This command will input the user address data and trigger the writing process.The output of the S26KS512SDPBHA023 is an active-low signal. Additionally, the device can be programmed in one or multiple segments. This allows flexibility in its applications.ConclusionOverall, the S26KS512SDPBHA023 is a reliable, cost-effective device with a great range of features packed into a small package. This device offers optimal performance at a low cost and makes it an ideal choice for embedded applications where a stable and higher speed memory device is required. The device also provides flexible memory management options, making it well-suited for a variety of application fields.

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