Automotive transimpedance amplifier - Allicdata Electronics

Related Categories

< 1 2 3 4 5 >

Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
MT28FW512ABA1HJ S-0AAT-ND	MT28FW512ABA1HJ S-0AAT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 105ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	1000 Order	1+: $0
DS2431P-A1+-ND	DS2431P-A1+	Maxim Integrated	View more Series: Automotive, AEC-Q100 Packaging: Tube Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (256 x 4) Access Time: 2s Memory Interface: 1-Wire Operating Temperature: -40C ~ 125C (TA) Mounting Type: Surface Mount Package / Case: 6-LSOJ (0.148", 3.76mm Width) Supplier Device Package: 6-TSOC Base Part Number: DS2431	83 Order	1+: $2.0664 10+: $1.9606 25+: $1.8126 50+: $1.7219 100+: $1.5545 250+: $1.4768 1000+: $1.1038
CAV93C46YE-GT3- ND	CAV93C46YE-GT3	ON Semiconductor	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Clock Frequency: 2MHz Memory Interface: SPI Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40C ~ 125C (TA)	1000 Order	3000+: $0.1991
S29GL256N11FFA0 13-ND	S29GL256N11FFA0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Write Cycle Time - Word, Page: 110ns Access Time: 110ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1600+: $7.1511
S34MS08G201BHB0 03-ND	S34MS08G201BHB0 03	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, MS-2 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2300+: $9.8839
MT28EW01GABA1HP C-0AAT-ND	MT28EW01GABA1HP C-0AAT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8, 64M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 105ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LBGA (11x13)	1000 Order	--
MT29AZ5A3CHHWD- 18AAT.84F-ND	MT29AZ5A3CHHWD- 18AAT.84F	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, Mobile LPDRAM Memory Size: 4Gb (512M x 8)(NAND), 8Gb (512M x 16)(LPDDR2) Clock Frequency: 533MHz Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	1+: $0
S34MS01G200TFB0 00-ND	S34MS01G200TFB0 00	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, MS-2 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	96+: $3.3605
S71KL512SC0BHB0 03-ND	S71KL512SC0BHB0 03	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, HyperFlash + HyperRAM KL Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH, DRAM Memory Size: 512Mbit Flash, 64Mbit RAM Clock Frequency: 100MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2500+: $5.42
S26KS512SDPBHA0 23-ND	S26KS512SDPBHA0 23	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, HyperFlash KS Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Clock Frequency: 166MHz Access Time: 96ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2500+: $5.9819
IS26KL512S-DABL A300-ND	IS26KL512S-DABL A300	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, HyperFlash KL Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Clock Frequency: 100MHz Access Time: 96ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 125C (TA)	1000 Order	338+: $8.9005
MT28FW512ABA1HP C-0AAT-ND	MT28FW512ABA1HP C-0AAT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 105ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LBGA (11x13)	1000 Order	1+: $0
MT29F4G08ABAFAW P-AATES:F-ND	MT29F4G08ABAFAW P-AATES:F	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TC)	1000 Order	1+: $0
S25FL064LABMFA0 13-ND	S25FL064LABMFA0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL-L Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Clock Frequency: 108MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	--
S29GL064N90TFA0 10-ND	S29GL064N90TFA0 10	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Write Cycle Time - Word, Page: 90ns Access Time: 90ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	91+: $3.1624
MT28FW01GABA1LP C-0AAT-ND	MT28FW01GABA1LP C-0AAT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (64M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 105ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LBGA (11x13)	1000 Order	1+: $0
S25FL064LABMFB0 11-ND	S25FL064LABMFB0 11	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL-L Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Clock Frequency: 108MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	455+: $1.631
S25FS256SDSBHB2 03-ND	S25FS256SDSBHB2 03	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FS-S Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Clock Frequency: 80MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2500+: $2.5919
AS4C256M8D3LA-1 2BAN-ND	AS4C256M8D3LA-1 2BAN	Alliance Memory, Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tray Part Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (256M x 8) Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Memory Interface: Parallel Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40C ~ 105C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-FBGA (10.5x8)	1000 Order	1+: $0
MT29F8G01ADAFD1 2-AATES:F-ND	MT29F8G01ADAFD1 2-AATES:F	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (8G x 1) Memory Interface: SPI Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TC)	1000 Order	1+: $0
S34ML01G204TFA0 13-ND	S34ML01G204TFA0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, ML-2 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (64M x 16) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1000+: $2.9991
CAV25512HU5E-GT 3-ND	CAV25512HU5E-GT 3	ON Semiconductor	View more Series: Automotive, AEC-Q100 Part Status: Not For New Designs Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40C ~ 125C (TA)	1000 Order	3000+: $1.2198
MT25QU128ABB8E1 2-0AUT-ND	MT25QU128ABB8E1 2-0AUT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Memory Interface: SPI Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	1000 Order	1+: $0
S25FL132K0XBHB0 20-ND	S25FL132K0XBHB0 20	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL1-K Part Status: Last Time Buy Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Clock Frequency: 108MHz Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	338+: $1.1928
S25FL128LAGBHB0 33-ND	S25FL128LAGBHB0 33	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL-L Part Status: Preliminary Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Clock Frequency: 133MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	1+: $0
S25FL128LAGBHB0 20-ND	S25FL128LAGBHB0 20	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL-L Part Status: Preliminary Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Clock Frequency: 133MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	1+: $0
1450-1256-ND	AS4C4M16SA-6BAN	Alliance Memory, Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tray Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (4M x 16) Clock Frequency: 166MHz Write Cycle Time - Word, Page: 2ns Access Time: 5.4ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	547 Order	--
S34MS02G104BHB0 13-ND	S34MS02G104BHB0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, MS-1 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (128M x 16) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2300+: $5.0357
MT25QU512ABB8E1 2-0AUT-ND	MT25QU512ABB8E1 2-0AUT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Memory Interface: SPI Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40C ~ 125C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	1000 Order	1+: $0
S29GL064S80DHB0 23-ND	S29GL064S80DHB0 23	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-S Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Write Cycle Time - Word, Page: 60ns Access Time: 80ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2200+: $2.3143
S25FL116K0XMFB0 43-ND	S25FL116K0XMFB0 43	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL1-K Part Status: Last Time Buy Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8) Clock Frequency: 108MHz Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	3600+: $0.6742
S25FL132K0XBHB0 23-ND	S25FL132K0XBHB0 23	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL1-K Part Status: Last Time Buy Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Clock Frequency: 108MHz Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2500+: $1.0835
S25FS064SDSMFM0 13-ND	S25FS064SDSMFM0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FS-S Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Clock Frequency: 80MHz Memory Interface: SPI - Quad I/O, QPI Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40C ~ 125C (TA)	1000 Order	2100+: $1.7778
MT29F8G01ADBFD1 2-AATES:F-ND	MT29F8G01ADBFD1 2-AATES:F	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (8G x 1) Memory Interface: SPI Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TC)	1000 Order	1+: $0
S25FL116K0XMFB0 41-ND	S25FL116K0XMFB0 41	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, FL1-K Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8) Clock Frequency: 108MHz Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	485+: $0.7546
S34MS01G200BHB0 03-ND	S34MS01G200BHB0 03	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, MS-2 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Write Cycle Time - Word, Page: 45ns Access Time: 45ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2300+: $2.6578
S34ML02G104BHB0 13-ND	S34ML02G104BHB0 13	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, ML-1 Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (128M x 16) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	2300+: $5.5366
S29GL512N10FFA0 10-ND	S29GL512N10FFA0 10	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, GL-N Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8, 32M x 16) Write Cycle Time - Word, Page: 100ns Access Time: 100ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	180+: $10.4784
428-4270-ND	S34ML08G201BHA0 00	Cypress Semiconductor Corp	View more Series: Automotive, AEC-Q100, ML-2 Packaging: Tray Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9)	210 Order	--
MT28GU256AAA2EG C-0SIT-ND	MT28GU256AAA2EG C-0SIT	Micron Technology Inc.	View more Series: Automotive, AEC-Q100 Packaging: Tray Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Clock Frequency: 133MHz Access Time: 96ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-TBGA (10x8)	1000 Order	1+: $0

< 1 2 3 4 5 >

Hot Searches: maxim automotive transimpedance amplifier automotive transimpedance amplifier automotive transimpedance amplifier ic transimpedance linear amplifier transimpedance operational amplifier transimpedance buffer amplifier automotive linear amplifier texas transimpedance amplifier ic transimpedance amplifier ic bipolar input transimpedance amplifier bipolar transimpedance amplifier transimpedance general amplifier 1.1-ghz transimpedance amplifier bidirectional transimpedance amplifier ic integrated transimpedance amplifier automotive amplifier module texas automotive grade amplifier automotive grade operational amplifier automotive current detection amplifier automotive amplifier 1.3mhz

Search Result:automotive transimpedance amplifier

Related Categories