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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
2SA1020-YF(J-ND	2SA1020-Y,F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC1623-L6-TP-N D	2SC1623-L6-TP	Micro Commercial Co	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 200mW Frequency - Transition: 250MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	1000 Order	3000+: $0.0335
KTC3198-GRA1G-N D	KTC3198-GR A1G	Taiwan Semiconductor Corporation	View more Packaging: Tape & Box (TB) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 500mW Frequency - Transition: 80MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	1000 Order	4000+: $0.0365
2N5210TAR-ND	2N5210TAR	ON Semiconductor	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100A, 5V Power - Max: 625mW Frequency - Transition: 30MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: 2N5210	1000 Order	1+: $0
2SD1207T-AEOSTR -ND	2SD1207T-AE	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: 3-MP Base Part Number: 2SD1207	1000 Order	--
2SC2655-Y(T6TOJ FM-ND	2SC2655-Y(T6TOJ ,FM	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2PC1815GR,116-N D	2PC1815GR,116	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 500mW Frequency - Transition: 80MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: 2PC1815	1000 Order	1+: $0
2SA2125-TD-HOST R-ND	2SA2125-TD-H	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 3.5W Frequency - Transition: 390MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	1000 Order	--
2SB1202S-EOS-ND	2SB1202S-E	ON Semiconductor	View more Packaging: Bulk Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TP Base Part Number: 2SB1202	485 Order	--
2SC4738-YLFTR-N D	2SC4738-Y,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	3000+: $0.0228 6000+: $0.0198 15000+: $0.0169 30000+: $0.0159 75000+: $0.0149 150000+: $0.0132
2SC6026CT-Y(TPL 3)TR-ND	2SC6026CT-Y(TPL 3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 60MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	1000 Order	1+: $0
BC212L-ND	BC212L	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3 Base Part Number: BC212	1000 Order	1+: $0
2SD1207S-AEOSTR -ND	2SD1207S-AE	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: 3-MP Base Part Number: 2SD1207	1000 Order	1+: $0
2SC2655-O(ND2AF )-ND	2SC2655-O(ND2,A F)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SA1797T100QTR- ND	2SA1797T100Q	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3 Base Part Number: 2SA1797	3000 Order	--
2SA1576AT106QTR -ND	2SA1576AT106Q	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 140MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3 Base Part Number: 2SA1576	3000 Order	--
2SA1534ARATB-ND	2SA1534ARA	Panasonic Electronic Components	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V Power - Max: 1W Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92NL-A1 Base Part Number: 2SA1534	1000 Order	1+: $0
KSC2785OTA-ND	KSC2785OTA	ON Semiconductor	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Power - Max: 250mW Frequency - Transition: 300MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S Base Part Number: KSC2785	1000 Order	1+: $0
2SA1020-OT6CSF( J-ND	2SA1020-O,T6CSF (J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
KSA733YBU-ND	KSA733YBU	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 250mW Frequency - Transition: 180MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3 Base Part Number: KSA733	1000 Order	1+: $0
FJZ733RTF-ND	FJZ733RTF	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Power - Max: 100mW Frequency - Transition: 180MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-623F Supplier Device Package: SOT-623F Base Part Number: FJZ733	1000 Order	1+: $0
2SA2154CT-Y(TPL 3)TR-ND	2SA2154CT-Y(TPL 3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	1000 Order	1+: $0
FJZ945OTF-ND	FJZ945OTF	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Power - Max: 100mW Frequency - Transition: 300MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-623F Supplier Device Package: SOT-623F Base Part Number: FJZ945	1000 Order	1+: $0
MSD601-RT1GOSTR -ND	MSD601-RT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59 Base Part Number: MSD601	15000 Order	--
NJVMJD45H11GOS- ND	NJVMJD45H11G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Power - Max: 1.75W Frequency - Transition: 90MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	1271 Order	1+: $0.6111 10+: $0.5405 100+: $0.4142 500+: $0.3274 1000+: $0.262
2SAR533P5T100TR -ND	2SAR533P5T100	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V Power - Max: 500mW Frequency - Transition: 300MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	1000 Order	1000+: $0.1031 2000+: $0.0945 5000+: $0.0888 10000+: $0.0831 25000+: $0.0764
1086-20670-ND	JANTX2N2218AL	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/251 Packaging: Bulk Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800mW Operating Temperature: -55C ~ 200C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	1000 Order	100+: $7.821
2SCR523UBTLTR-N D	2SCR523UBTL	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 350MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: UMT3F	3000 Order	--
2SC2412KT146RTR -ND	2SC2412KT146R	ROHM Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V Power - Max: 200mW Frequency - Transition: 180MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3 Base Part Number: 2SC2412	27000 Order	--
1086-20855-ND	JANTX2N3507L	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/349 Packaging: Bulk Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Power - Max: 1W Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	1000 Order	100+: $11.6761
KSA1175YTA-ND	KSA1175YTA	ON Semiconductor	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 250mW Frequency - Transition: 180MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S Base Part Number: KSA1175	1000 Order	1+: $0
KSC2785YTA-ND	KSC2785YTA	ON Semiconductor	View more Packaging: Tape & Box (TB) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 250mW Frequency - Transition: 300MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S Base Part Number: KSC2785	1000 Order	--
1086-2676-ND	JANTX2N2222AL	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/255 Packaging: Bulk Part Status: Discontinued at Digi-Key Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-218	1000 Order	1+: $0
2SA1931SINFQ(J- ND	2SA1931,SINFQ(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
BC212_D26Z-ND	BC212_D26Z	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V Power - Max: 625mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: BC212	1000 Order	1+: $0
1727-5767-2-ND	PBSS5250T,215	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Power - Max: 480mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23) Base Part Number: PBSS5250	1000 Order	3000+: $0.0548 6000+: $0.0517 15000+: $0.0472 30000+: $0.0441 75000+: $0.0406
2SA2126-E-ND	2SA2126-E	ON Semiconductor	View more Packaging: Bulk Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 800mW Frequency - Transition: 390MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TP Base Part Number: 2SA2126	1000 Order	1000+: $0.1933
2SA2126-S-TL-E- ND	2SA2126-S-TL-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 520mV @ 100mA, 2A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 800mW Frequency - Transition: 390MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: 2-TP-FA	1000 Order	--
BC182BRL1-ND	BC182BRL1	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Power - Max: 350mW Frequency - Transition: 200MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: BC182	1000 Order	1+: $0
BC212L_J35Z-ND	BC212L_J35Z	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: BC212	1000 Order	1+: $0

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