| Allicdata Part #: | 2SCR523UBTLTR-ND |
| Manufacturer Part#: |
2SCR523UBTL |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | TRANS NPN 50V 0.1A UMT3F |
| More Detail: | Bipolar (BJT) Transistor NPN 50V 100mA 350MHz 200m... |
| DataSheet: |  2SCR523UBTL Datasheet/PDF |
| Quantity: | 3000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
| Power - Max: | 200mW |
| Frequency - Transition: | 350MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-85 |
| Supplier Device Package: | UMT3F |
Description
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The 2SCR523UBTL is a high voltage, high speed switching transistor with a high breakdown voltage and low collector-emitter saturation voltage. It is widely used in applications that require high-speed switching, such as switching power supplies and motor control. This article will discuss the application field and working principle of the 2SCR523UBTL.
Application Field
The 2SCR523UBTL is designed for use in high power switching applications such as switching power supplies and motor control. The device’s high breakdown voltage and low collector-emitter saturation voltage make it ideal for these applications. The device’s high-speed switching capability is also advantageous in applications that require fast switching of large currents, such as in motor control systems. The device’s high current gain and low saturation voltage also make it well suited for switching high power transistors in power supplies.Working Principle
The 2SCR523UBTL is a bipolar junction transistor (BJT). This type of device is composed of three semiconductor regions that form a P–N junction when combined. The device is constructed such that one region is an emitter, another is a collector, and the third is a base. The current gain of a BJT is determined by the current flowing between the emitter and collector regions.The 2SCR523UBTL is designed to be operated in either an on or off state. When the device is turned on, current flows from the emitter to the collector, producing a high current gain and low saturation voltage. This allows the device to switch high power transistors in power supplies quickly and efficiently. When the device is turned off, current no longer flows from the emitter to the collector, and the device stays off until it is triggered again.Conclusion
The 2SCR523UBTL is a high voltage, high-speed switching transistor with a high breakdown voltage and low collector-emitter saturation voltage. It is particularly well suited for use in high power switching applications, such as switching power supplies and motor control, due to its high-speed switching capability, high current gain and low saturation voltage. The 2SCR523UBTL is a bipolar junction transistor (BJT) and is designed to be switched between an on and off state.The specific data is subject to PDF, and the above content is for reference
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