2SB1202S-E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SB1202S-E is a metal-oxide-semiconductor two-stage bipolar transistor. It is an NPN transistor, meaning that the emitter-base junction is forward biased and the collector-base junction is reversed biased. This type of transistor is used in many applications such as amplifiers, level shifters, current amplifiers, and audio power amplifiers.

The 2SB1202S-E is primarily used in audio power amplifier applications due to its high voltage and current rating capabilities. This transistor is also well suited for electronic switch applications where it can rapidly switch from an ON to an OFF state. This device is made up of two transistors, the 2SB1202S and the 2SB1206S-E. The 2SB1206S-E is the NPN driver transistor that is used to drive the 2SB1202S-E.

The 2SB1202S-E has a low noise figure and high gain, making it ideal for PA audio applications. It is capable of working with signals up to 25kHz, making it a great choice for audio frequency applications. The package size is small, allowing it to be utilized in a wide variety of applications and making it suitable for high density packing. The maximum power dissipation is up to 8W.

The working principle of the 2SB1202S-E is based on the current flow between the collector and the emitter of a two-stage bipolar transistor. In this type of transistor, there are two stages, the amplifier and the driver, which are connected in series to create a larger current. The driver stage amplifies the signal from the input and sends it to the amplifier stage where it is amplified further before being transmitted out at the collector terminal.

The output current of the 2SB1202S-E is determined by the amount of base current that is provided. The voltage drop across the base-emitter junction determines the collector current and the amount of output power. The gain of the device is determined by the ratio of the collector voltage to the base voltage.

The 2SB1202S-E is a versatile and reliable transistor that can be used in a wide range of applications. It is easy to use, has low noise, and high gain. Its small package size makes it ideal for high density layouts, and its maximum power dissipation rating is 8W. This device is useful in many applications such as amplifiers, level shifters, current amplifiers, and audio power amplifiers.

The specific data is subject to PDF, and the above content is for reference