Allicdata Part #: | NJVMJD45H11GOS-ND |
Manufacturer Part#: |
NJVMJD45H11G |
Price: | $ 0.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 8A DPAK-4 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 8A 90MHz 1.75W Su... |
DataSheet: | NJVMJD45H11G Datasheet/PDF |
Quantity: | 1271 |
1 +: | $ 0.61110 |
10 +: | $ 0.54054 |
100 +: | $ 0.41423 |
500 +: | $ 0.32745 |
1000 +: | $ 0.26195 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 400mA, 8A |
Current - Collector Cutoff (Max): | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 4A, 1V |
Power - Max: | 1.75W |
Frequency - Transition: | 90MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
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Bipolar Junction Transistors (BJTs) are a type of transistor that is used in many electronics applications from small signal to very high power ones. In particular, the NJVMJD45H11G is a single BJT that is often used as a power switch for applications such as motor control and light dimming. In this article, we will discuss in detail the application fields and working principle of the NJVMJD45H11G.
Application fields
The NJVMJD45H11G is a high-voltage, high-current BJT that can be used in power switching and amplifying circuits. Its maximum voltage rating is 800V, with a maximum collector current of 25A and an output power rating of 30W. This makes it suitable for controlling motors, lighting applications and other large loads. It is also well-suited for audio applications, as it offers good sound quality and low distortion. The NJVMJD45H11G is highly efficient, with a very low on-resistance of 0.1Ω. This efficient design allows for less heat dissipation, which in turn leads to lower energy bills and better performance.
Working principle
The NJVMJD45H11G is a polarized BJT which has two distinct regions - the emitter and the collector. It uses holes and electrons to conduct current. When voltage is applied to the emitter, electrons are injected into the base region of the transistor, which then causes holes to be drawn out of the collector. This creates a depletion layer in the base region which blocks the current flow. As the voltage across the emitter is increased, more electrons are injected, allowing more current to flow through the collector region. This can be used to control current flow to a load, allowing an electrical signal to be amplified or switched.
Another important feature of the NJVMJD45H11G is its ability to handle high-voltage and current spikes. This is due to its low saturation voltage, which allows the transistor to remain stable and prevent overloading. The NJVMJD45H11G also has a low turn-on time of just 5 nanoseconds, making it ideal for fast-switching applications. The maximum frequency at which the NJVMJD45H11G can switch is 500Hz, meaning it can be used for applications that require rapid pulses.
Overall, the NJVMJD45H11G is an ideal choice for applications that require a high-voltage, high-current switching transistor. Its robust construction and efficient design make it an excellent choice for motor and lighting applications, as well as audio systems. In addition, its low saturation voltage and fast switching times make it suitable for controlling high frequency signals.
The specific data is subject to PDF, and the above content is for reference
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