Osc 200mhz 3.3v lvpecl smd - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IS43R16320F-5TL I-TR-ND	IS43R16320F-5TL I-TR	ISSI, Integrated Silicon Solution Inc	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	--
IS43R16320E-5BL I-ND	IS43R16320E-5BL I	ISSI, Integrated Silicon Solution Inc	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	190+: $5.794
MT29F64G08CBCGB J4-5M:GTR-ND	MT29F64G08CBCGB J4-5M:G TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Clock Frequency: 200MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	1+: $0
IS61VPS102418B- 200TQLI-ND	IS61VPS102418B- 200TQLI	ISSI, Integrated Silicon Solution Inc	View more Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (1M x 18) Clock Frequency: 200MHz Access Time: 3ns Memory Interface: Parallel Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	72+: $10.1176
IS46R16320E-5TL A1-ND	IS46R16320E-5TL A1	ISSI, Integrated Silicon Solution Inc	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	108+: $5.7104
IS43R16320E-5BL -ND	IS43R16320E-5BL	ISSI, Integrated Silicon Solution Inc	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	190+: $5.2684
IS61NLP51218B-2 00TQLI-TR-ND	IS61NLP51218B-2 00TQLI-TR	ISSI, Integrated Silicon Solution Inc	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Clock Frequency: 200MHz Access Time: 3.1ns Memory Interface: Parallel Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	800+: $6.5608
MT46V128M4CY-5B :JTR-ND	MT46V128M4CY-5B :J TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (128M x 4) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	1+: $0
IS43R86400E-5BL I-TR-ND	IS43R86400E-5BL I-TR	ISSI, Integrated Silicon Solution Inc	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	2500+: $5.0357
IS43R16320E-5BL -TR-ND	IS43R16320E-5BL -TR	ISSI, Integrated Silicon Solution Inc	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	2500+: $4.5835
IS43R16320F-5BL I-ND	IS43R16320F-5BL I	ISSI, Integrated Silicon Solution Inc	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	190+: $4.9697
S40410161B1B1I0 10-ND	S40410161B1B1I0 10	Cypress Semiconductor Corp	View more Series: e.MMC 1B1 Packaging: Tray Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 16Gb (2G x 8) Clock Frequency: 200MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA	1000 Order	1+: $0
MT29F64G08CBCGB J4-5M:G-ND	MT29F64G08CBCGB J4-5M:G	Micron Technology Inc.	View more Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Clock Frequency: 200MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	1+: $0
S40410161B1B1W0 13-ND	S40410161B1B1W0 13	Cypress Semiconductor Corp	View more Series: e.MMC 1B1 Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 16Gb (2G x 8) Clock Frequency: 200MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA	1000 Order	1+: $0
IS61NLP51218B-2 00TQLI-ND	IS61NLP51218B-2 00TQLI	ISSI, Integrated Silicon Solution Inc	View more Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Clock Frequency: 200MHz Access Time: 3.1ns Memory Interface: Parallel Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	72+: $8.0941
IS46R16320E-5BL A1-TR-ND	IS46R16320E-5BL A1-TR	ISSI, Integrated Silicon Solution Inc	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1500+: $5.4468
IS46R16320E-5BL A1-ND	IS46R16320E-5BL A1	ISSI, Integrated Silicon Solution Inc	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	108+: $5.9329
MT29F256G08EECD BJ4-5M:DTR-ND	MT29F256G08EECD BJ4-5M:D TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Clock Frequency: 200MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	1+: $0
IS43R16320F-5BL I-TR-ND	IS43R16320F-5BL I-TR	ISSI, Integrated Silicon Solution Inc	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	2500+: $4.3266
MT29F512G08CECB BJ4-5M:BTR-ND	MT29F512G08CECB BJ4-5M:B TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Clock Frequency: 200MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	1+: $0
IS61LPS12836EC- 200B3LI-ND	IS61LPS12836EC- 200B3LI	ISSI, Integrated Silicon Solution Inc	View more Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Clock Frequency: 200MHz Access Time: 3.1ns Memory Interface: Parallel Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	144+: $4.9171
MT46V128M4CY-5B :J-ND	MT46V128M4CY-5B :J	Micron Technology Inc.	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (128M x 4) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	1+: $0
MT46H64M16LFBF- 5AAT:B-ND	MT46H64M16LFBF- 5 AAT:B	Micron Technology Inc.	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 1Gb (64M x 16) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Memory Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40C ~ 105C (TA)	1000 Order	1+: $0
IS43R86400E-5BL -ND	IS43R86400E-5BL	ISSI, Integrated Silicon Solution Inc	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	190+: $5.2684
IS43R86400F-5BL I-ND	IS43R86400F-5BL I	ISSI, Integrated Silicon Solution Inc	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	190+: $5.1489
IS61LPS12836EC- 200B3LI-TR-ND	IS61LPS12836EC- 200B3LI-TR	ISSI, Integrated Silicon Solution Inc	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Clock Frequency: 200MHz Access Time: 3.1ns Memory Interface: Parallel Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	2000+: $4.23
S40410081B1B1I0 00-ND	S40410081B1B1I0 00	Cypress Semiconductor Corp	View more Series: e.MMC 1B1 Packaging: Tray Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Clock Frequency: 200MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA	1000 Order	1+: $0
IS43R86400E-5TL I-ND	IS43R86400E-5TL I	ISSI, Integrated Silicon Solution Inc	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	216+: $5.3042
IS43R16320F-5TL I-ND	IS43R16320F-5TL I	ISSI, Integrated Silicon Solution Inc	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	216+: $4.5277
IS43R16320F-5BL -TR-ND	IS43R16320F-5BL -TR	ISSI, Integrated Silicon Solution Inc	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	2500+: $3.9463
MT29F128G08EBCD BJ4-5M:DTR-ND	MT29F128G08EBCD BJ4-5M:D TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Clock Frequency: 200MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	1+: $0
IS43R16320F-5BL -ND	IS43R16320F-5BL	ISSI, Integrated Silicon Solution Inc	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	190+: $4.5277
S40410161B1B1W0 10-ND	S40410161B1B1W0 10	Cypress Semiconductor Corp	View more Series: e.MMC 1B1 Packaging: Tray Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 16Gb (2G x 8) Clock Frequency: 200MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA	1000 Order	1+: $0
IS46R16320E-5TL A1-TR-ND	IS46R16320E-5TL A1-TR	ISSI, Integrated Silicon Solution Inc	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1500+: $5.1349
IS43R16320E-5TL I-TR-ND	IS43R16320E-5TL I-TR	ISSI, Integrated Silicon Solution Inc	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1500+: $4.7734
IS43R86400E-5BL -TR-ND	IS43R86400E-5BL -TR	ISSI, Integrated Silicon Solution Inc	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	2500+: $4.5835
IS43R86400F-5BL -TR-ND	IS43R86400F-5BL -TR	ISSI, Integrated Silicon Solution Inc	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	2500+: $4.0799
S40410161B1B1I0 13-ND	S40410161B1B1I0 13	Cypress Semiconductor Corp	View more Series: e.MMC 1B1 Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 16Gb (2G x 8) Clock Frequency: 200MHz Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA	1000 Order	1+: $0
IS43R86400F-5BL I-TR-ND	IS43R86400F-5BL I-TR	ISSI, Integrated Silicon Solution Inc	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Memory Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	2500+: $4.4807
CY7C1370KV33-20 0BZXI-ND	CY7C1370KV33-20 0BZXI	Cypress Semiconductor Corp	View more Series: NoBL Part Status: Active Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Clock Frequency: 200MHz Access Time: 3ns Memory Interface: Parallel Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	136+: $17.1471

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