Storage logic trigger - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
RN1673(TE85LF)T R-ND	RN1673(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	1000 Order	1+: $0
RN2965FE(TE85LF )TR-ND	RN2965FE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	1+: $0
RN2909(T5LFT)TR -ND	RN2909(T5L,F,T)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0
AB2.8X4.5DY-ND	AB 2.8X4.5DY	Toshiba Semiconductor and Storage	View more Series: Amobeads Part Status: Active Type: Round Design: Solid Outer Dimension: 0.157" Dia (4.00mm) Mounting Type: Free Hanging Length: 0.224" (5.70mm)	1000 Order	10000+: $0.104
TAR5S30UTE85LFT R-ND	TAR5S30UTE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 15V Voltage - Output (Min/Fixed): 3V Voltage Dropout (Max): 0.2V @ 50mA Current - Output: 200mA Current - Quiescent (Iq): 850A PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: UFV	1000 Order	1+: $0
TC74ACT157FN-ND	TC74ACT157FN	Toshiba Semiconductor and Storage	View more Series: TC74ACT Packaging: Tube Part Status: Obsolete Type: Multiplexer Circuit: 4 x 2:1 Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOL Base Part Number: 74ACT157	1000 Order	1+: $0
SSM6K514NULFTR- ND	SSM6K514NU,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.4V @ 100A Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 20V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	1000 Order	3000+: $0.1157
TK6A65WS5X-ND	TK6A65W,S5X	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.9A, 10V Vgs(th) (Max) @ Id: 3.5V @ 180A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 300V Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	161 Order	1+: $1.2663 50+: $1.0123 100+: $0.8857 500+: $0.6869 1000+: $0.5423
2SA1931BOSCHQ(J -ND	2SA1931,BOSCHQ( J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SC6042T2HOSH1Q (J-ND	2SC6042,T2HOSH1 Q(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 375V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 1W Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	1000 Order	1+: $0
HN1D02FULFTR-ND	HN1D02FU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 2 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 125C (Max) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6 Base Part Number: HN1D02	3000 Order	3000+: $0.0529 6000+: $0.0476 15000+: $0.0423 30000+: $0.0397 75000+: $0.0353
TMP91FW27UG(CJZ )-ND	TMP91FW27UG(C,J Z)	Toshiba Semiconductor and Storage	View more Series: TLCS-900/L1 Packaging: Tray Part Status: Active Core Processor: 900/L1 Core Size: 16-Bit Speed: 27MHz Connectivity: EBI/EMI, IC, IrDA, UART/USART Peripherals: DMA, WDT Number of I/O: 53 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH RAM Size: 12K x 8 Voltage - Supply (Vcc/Vdd): 2.2 V ~ 3.6 V Data Converters: A/D 4x10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	1000 Order	200+: $3.9977
TLP5772(TPETR-N D	TLP5772(TP,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/s Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 2.5A, 2.5A Current - Peak Output: 2.5A Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 8mA Voltage - Supply: 10 V ~ 30 V Operating Temperature: -40C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO Approvals: CQC, cUR, UR, VDE	1500 Order	1500+: $0.6384 3000+: $0.6036 7500+: $0.5804 10500+: $0.5688
TLP2355(TPRE-ND	TLP2355(TPR,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 25kV/s Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 25mA Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Rise / Fall Time (Typ): 15ns, 12ns Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 3 V ~ 20 V Operating Temperature: -40C ~ 125C	1000 Order	3000+: $0.2304
TLP2601(LF1F)-N D	TLP2601(LF1,F)	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 1kV/s Input Type: DC Output Type: Open Collector, Schottky Clamped Current - Output / Channel: 25mA Data Rate: 10MBd Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Rise / Fall Time (Typ): 30ns, 30ns Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0C ~ 70C	1000 Order	50+: $0.8143
TLP293-4(GBTPRE TR-ND	TLP293-4(GBTPR, E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	1000 Order	2000+: $0.2876 6000+: $0.2811 10000+: $0.2703
TB62215AFGC8EL- ND	TB62215AFG,C8,E L	Toshiba Semiconductor and Storage	View more Series: * Part Status: Active	1000 Order	2000+: $1.2217
TLP281-4JFTR-ND	TLP281-4(TP,J,F )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Number of Channels: 4 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 100C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.173", 4.40mm Width) Supplier Device Package: 16-SOP	1000 Order	1+: $0
TLP291(GR-TPE)T R-ND	TLP291(GR-TP,E)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 7s, 7s Rise / Fall Time (Typ): 4s, 7s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm Width) Supplier Device Package: 4-SO	1000 Order	1+: $0
DF2B7ASLL3FTR-N D	DF2B7ASL,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 5.5V Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 20V Current - Peak Pulse (10/1000s): 4A (8/20s) Power - Peak Pulse: 80W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 8.5pF @ 1MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: SL2	1000 Order	10000+: $0.0174
DF2S5M4CTL3FTR- ND	DF2S5M4CT,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 3.6V (Max) Voltage - Breakdown (Min): 3.7V Voltage - Clamping (Max) @ Ipp: 15V Current - Peak Pulse (10/1000s): 2A (8/20s) Power - Peak Pulse: 30W Power Line Protection: No Capacitance @ Frequency: 0.35pF @ 1MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2	1000 Order	10000+: $0.0214 30000+: $0.0201 50000+: $0.0189 100000+: $0.0168
TC62D722CFNG-ND	TC62D722CFNG	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Preliminary Type: Linear Topology: Shift Register Internal Switch(s): Yes Number of Outputs: 16 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 17V Current - Output / Channel: 90mA Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad Supplier Device Package: 24-HTSSOP	1000 Order	--
SSM6L61NULFTR-N D	SSM6L61NU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4A Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-UDFN (2x2)	3000 Order	3000+: $0.1089
RN2113CT(TPL3)T R-ND	RN2113CT(TPL3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	1000 Order	1+: $0
2SC5200-OQ-ND	2SC5200-O(Q)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 150W Frequency - Transition: 30MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(L) Base Part Number: 2SC5200	499 Order	--
TK14N65WS1F-ND	TK14N65W,S1F	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 13.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 3.5V @ 690A Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V Power Dissipation (Max): 130W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	119 Order	1+: $2.2428 10+: $2.0015 100+: $1.6412 500+: $1.329 1000+: $1.1208
SSM6J502NULF(TT R-ND	SSM6J502NU,LF(T	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 23.1 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	3000 Order	3000+: $0.1572
TK40A10N1S4X-ND	TK40A10N1,S4X	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 500A Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 50V Power Dissipation (Max): 35W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	540 Order	1+: $1.3419 50+: $1.0813 100+: $0.9732 500+: $0.7569 1000+: $0.6272
TCR3DG32LFTR-ND	TCR3DG32,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.2V Voltage Dropout (Max): 0.215V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 65A Current - Supply (Max): 78A PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 4-XFBGA, CSPBGA Supplier Device Package: 4-WCSPE (0.65x0.65)	5000 Order	5000+: $0.0586 10000+: $0.0548 25000+: $0.0503 50000+: $0.0484 125000+: $0.0465
TCR2DG33LFTR-ND	TCR2DG33,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.3V Voltage Dropout (Max): 0.11V @ 100mA Current - Output: 200mA Current - Quiescent (Iq): 70A Protection Features: Inrush Current, Over Current, Thermal Shutdown Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLCSP Supplier Device Package: 4-WCSP (0.79x0.79)	1000 Order	3000+: $0.0863 6000+: $0.081 15000+: $0.0758 30000+: $0.0695 75000+: $0.0669
TCK321GLFTR-ND	TCK321G,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 2:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 2.3 V ~ 36 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Rds On (Typ): 98 mOhm Features: Slew Rate Controlled, Status Flag Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO Operating Temperature: -40C ~ 85C (TA) Package / Case: 16-UFBGA, CSPBGA Supplier Device Package: 16-WCSPC (1.9x1.9)	5000 Order	5000+: $0.3653 10000+: $0.3516
CRS03QTR-ND	CRS03(TE85L,Q,M )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 100A @ 30V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40C ~ 150C Base Part Number: CRS03	72000 Order	3000+: $0.0709 6000+: $0.0666 15000+: $0.0623 30000+: $0.0573
TPC8035-HTE12LQ MTR-ND	TPC8035-H(TE12L ,QM	Toshiba Semiconductor and Storage	View more Series: U-MOSVI-H Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	1000 Order	1+: $0
1SS362TE85LFTR- ND	1SS362TE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 80mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 125C (Max) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	1+: $0
CRZ24(TE85LQM)- ND	CRZ24(TE85L,Q,M )	Toshiba Semiconductor and Storage	View more Part Status: Active Voltage - Zener (Nom) (Vz): 24V Tolerance: 10% Power - Max: 700mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10A @ 17V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5)	1000 Order	3000+: $0.1118
DSR01S30SCL3FTR -ND	DSR01S30SC,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 700A @ 30V Capacitance @ Vr, F: 8.2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: SC2 Operating Temperature - Junction: 125C (Max) Base Part Number: DSR01S30	1000 Order	10000+: $0.0281
CRS10I30C(TE85L QM-ND	CRS10I30C(TE85L ,QM	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 100A @ 30V Capacitance @ Vr, F: 82pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150C (Max)	1000 Order	3000+: $0.083
TLP2531F-ND	TLP2531(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 2 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Turn On / Turn Off Time (Typ): 200ns, 300ns Input Type: DC Output Type: Transistor Voltage - Output (Max): 15V Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 25mA Operating Temperature: -55C ~ 100C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	1000 Order	--
TLP5752(E-ND	TLP5752(E	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/s Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 2.5A, 2.5A Current - Peak Output: 2.5A Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO Approvals: CQC, CSA, cUL, UL	72 Order	1+: $1.7262 10+: $1.5278 25+: $1.1332 125+: $0.9855 250+: $0.8869 500+: $0.7884 1000+: $0.6775 2500+: $0.6405 5000+: $0.6159
TLP293-4(V4-TRE TR-ND	TLP293-4(V4-TR, E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	1000 Order	2000+: $0.2876 6000+: $0.2811 10000+: $0.2703

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