SSM6L61NU,LF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N and P-Channel
FET Feature:	Standard
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	4A
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	--
Gate Charge (Qg) (Max) @ Vgs:	--
Input Capacitance (Ciss) (Max) @ Vds:	--
Power - Max:	--
Operating Temperature:	--
Mounting Type:	Surface Mount
Package / Case:	6-WDFN Exposed Pad
Supplier Device Package:	6-UDFN (2x2)

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Transistors - FETs, MOSFETs - ArraysThe SSM6L61NU,LF is a field effect transistor (FET) array designed for various low-frequency applications. It is the newest GaAs N-channel FET array release from RF Systems, Inc. that combines four individual FET switches on a single monolithic substrate. The SSM6L61NU,LF offers superior layouts with minimized dead area and low capacitance for high-bandwidth for low-noise, low-gate lag and low-power-consumption applications. The SSM6L61NU,LF is a type of transistor array, which is a combination of transistors on a single substrate. The main advantages of using a transistor array are that it has more filters, processing power and speed than using just one transistor. The SSM6L61NU,LF is loaded with four individual field effect transistors that are capable of operating at very low frequencies without deteriorating the damping factor. This makes it suitable for various RF applications such as low frequency attenuator, amplifier or signal conditioning.The SSM6L61NU,LF is based on gallium arsenide (GaAs) technology and is used in mixtures of both low- and high-frequency applications. GaAs technology offers superior speed and performance compared to traditional silicon-based transistors. The advantage of using GaAs technology is that it has much higher speeds and better frequency response than other FETs. This is why GaAs is commonly used in low-frequency applications.The SSM6L61NU,LF is composed of four distinct FETs that can be used in different combinations to configure different switching functions. The FET transistors are connected through a single power supply and can operate as an array with a single-pole, four-throw switching configuration. This type of array uses two P-channel transistors connected in series to form a “sandwich” structure. The SSM6L61NU,LF FET array offers very low on-resistance that is suitable for various RF impedance matching circuits. It is also capable of providing high impedance ratios due to its low on-resistance. This is why it is used in RF impedance matching circuits for low-noise and low-power-consumption applications.The SSM6L61NU,LF offers excellent linearity performance up to low-frequency applications. The array allows for a simple adjustment of the load impedance by using a resistive divider. Thisallows for the tuning of the output impedance to match a specified load. This is why the SSM6L61NU,LF is widely used in different types of low-frequency applications such as signal conditioning, oscillators, and filters.The SSM6L61NU,LF is a highly reliable device with a very long lifetime and excellent high-frequency performance. The device is designed perfect for a wide variety of high-speed applications and its monolithic construction ensures low capacitance and low gate lag. It is also available in various packaging options that include: SOT5 and LGA packages. Overall, the SSM6L61NU,LF is an ideal solution for a wide range of low-frequency applications and offers excellent performance at low frequencies with minimal power consumption. Its monolithic construction makes it perfect for many types of high-speed applications and its low on-resistance makes it suitable for impedance matching in many applications. This makes the SSM6L61NU,LF a great choice for both low-power and high-performance RF applications.

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