TPC8035-H(TE12L,QM Discrete Semiconductor Products

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The TPC8035-H (TE12L,QM) is a high performance Power MOSFET that uses MOS technology to provide excellent electrical performance for switching and general-purpose use. The device offers very good commutating performance and low on-resistance for very low power dissipation. It also features a high surge capability and a wide temperature range of operation.The TPC8035-H (TE12L,QM) is a single-channel device, meaning it consists of one MOSFET. These devices are often called "single-ended" because the drain and source terminals of the MOSFET are connected to the same power supply, in this case, TE12L.The MOSFET has a number of characteristics that make it suitable for switching and general purpose use. For example, when the gate-to-source voltage of the MOSFET is near zero, the device is in its "off" state. When the gate-to-source voltage is increased beyond the threshold voltage, the device moves into its "on" state, allowing current to flow between the drain and source terminals.The TPC8035-H (TE12L,QM) also has a number of other characteristics that make it suitable for many applications. The device has a high input capacitance which allows it to switch quickly, and a relatively low on-resistance, resulting in a low power dissipation. The device is also available in a wide range of packages, from tiny TO-220 packages to large D2PAK packages, making it suitable for a wide range of applications.The TPC8035-H (TE12L,QM) is ideal for applications such as AC/DC power conversion, circuit protection, motor controllers, battery chargers, and various switching and general purpose applications. With its low on-resistance and high input capacitance, the device is capable of delivering high-performance switching with very low power dissipation. The wide temperature range of operation also makes the TPC8035-H (TE12L,QM) suitable for many applications.In summary, the TPC8035-H (TE12L,QM) is a high performance Power MOSFET that uses MOS technology to provide excellent electrical performance for switching and general-purpose use. The device offers very good commutating performance and low on-resistance for very low power dissipation. It also has a high surge capability and a wide temperature range of operation, making it suitable for a wide range of applications. With its low on-resistance and high input capacitance, the device is capable of delivering high-performance switching with very low power dissipation.

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