RN2965FE(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN2965FE(TE85LF)TR-ND |
Manufacturer Part#: |
RN2965FE(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.1W ES6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2965FE(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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The RN2965FE(TE85L,F) bipolar junction transistor (BJT) array is part of a range of surface mount transistors developed by ROHM Electronics. The innovative design of the RN2965FE(TE85L,F) produces a pre-biased BJT array which offers a high degree of flexibility and performance. This makes the RN2965FE(TE85L,F) the ideal choice for use in a range of applications including mobile devices, audio amplifier circuits, power management and automotive applications.
The RN2965FE(TE85L,F) BJT array consists of two NPN transistors connected in a Darlington configuration. The transistors are pre-biased to allow a high degree of current flow and to control the amount of current delivered during specific electrical operations. The pre-biased configuration of the transistors also provides protection against overvoltage or shorts, eliminating the need for external resistors.
The pre-biasing capability of the RN2965FE(TE85L,F) simplifies design and makes it ideal for power management applications. The pre-biasing feature also allows the array to offer a high degree of flexibility, allowing them to be used in a variety of applications. For mobile devices the array provides both low power consumption and excellent performance in high demand applications. In audio amplifier and power management circuits, the transistors can provide stable output power, while automotive applications benefit from the pre-biased array’s robustness and durability.
The RN2965FE(TE85L,F) also has a wide range of operating temperature ranges (-40℃ to 125℃). This makes it ideal for use in a variety of environments, including automotive and industrial applications where wide temperature changes are common. The array is also constructed using a high-density mounting process, ensuring reliable performance in critical situations.
The RN2965FE(TE85L,F) BJT array is a versatile and reliable solution for a range of applications. Its pre-biasing feature provides excellent performance and stability, and the high-density mounting process ensures reliable operation. The wide range of temperature capabilities and low-power consumption also make it ideal for mobile devices, audio amplifiers and power management circuits. With its range of features, the RN2965FE(TE85L,F) is the perfect choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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RN2906FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2911FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
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RN2902FE,LF(CT | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.2W E... |
RN2903,LF(CT | Toshiba Semi... | 0.04 $ | 1000 | TRANS 2PNP PREBIAS 0.2W U... |
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RN2967FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
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RN2970FE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
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