RN2965FE(TE85L,F) Allicdata Electronics

RN2965FE(TE85L,F) Discrete Semiconductor Products

Allicdata Part #:

RN2965FE(TE85LF)TR-ND

Manufacturer Part#:

RN2965FE(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2PNP PREBIAS 0.1W ES6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: RN2965FE(TE85L,F) datasheetRN2965FE(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Description

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The RN2965FE(TE85L,F) bipolar junction transistor (BJT) array is part of a range of surface mount transistors developed by ROHM Electronics. The innovative design of the RN2965FE(TE85L,F) produces a pre-biased BJT array which offers a high degree of flexibility and performance. This makes the RN2965FE(TE85L,F) the ideal choice for use in a range of applications including mobile devices, audio amplifier circuits, power management and automotive applications.

The RN2965FE(TE85L,F) BJT array consists of two NPN transistors connected in a Darlington configuration. The transistors are pre-biased to allow a high degree of current flow and to control the amount of current delivered during specific electrical operations. The pre-biased configuration of the transistors also provides protection against overvoltage or shorts, eliminating the need for external resistors.

The pre-biasing capability of the RN2965FE(TE85L,F) simplifies design and makes it ideal for power management applications. The pre-biasing feature also allows the array to offer a high degree of flexibility, allowing them to be used in a variety of applications. For mobile devices the array provides both low power consumption and excellent performance in high demand applications. In audio amplifier and power management circuits, the transistors can provide stable output power, while automotive applications benefit from the pre-biased array’s robustness and durability.

The RN2965FE(TE85L,F) also has a wide range of operating temperature ranges (-40℃ to 125℃). This makes it ideal for use in a variety of environments, including automotive and industrial applications where wide temperature changes are common. The array is also constructed using a high-density mounting process, ensuring reliable performance in critical situations.

The RN2965FE(TE85L,F) BJT array is a versatile and reliable solution for a range of applications. Its pre-biasing feature provides excellent performance and stability, and the high-density mounting process ensures reliable operation. The wide range of temperature capabilities and low-power consumption also make it ideal for mobile devices, audio amplifiers and power management circuits. With its range of features, the RN2965FE(TE85L,F) is the perfect choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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