Storage logic trigger - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TLP385(D4GR-TLE -ND	TLP385(D4GR-TL, E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	3000+: $0.1029
TLP785(GRLF-ND	TLP785(GRL,F	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 200% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 110C	1000 Order	100+: $0.1885
TLP293(BLLE-ND	TLP293(BLL,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm Width) Supplier Device Package: 4-SO	1000 Order	175+: $0.1952
CRH01QTR-ND	CRH01(TE85L,Q,M )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10A @ 200V Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40C ~ 150C Base Part Number: CRH01	6000 Order	3000+: $0.095 6000+: $0.0892 15000+: $0.0834 30000+: $0.0767
2SK3309(Q)-ND	2SK3309(Q)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 10V Power Dissipation (Max): 65W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FL Package / Case: TO-220-3, Short Tab	1000 Order	1+: $0
1SS416L3MTR-ND	1SS416,L3M	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 50A @ 30V Capacitance @ Vr, F: 15pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: fSC Operating Temperature - Junction: 125C (Max) Base Part Number: 1SS416	10000 Order	10000+: $0.0225 30000+: $0.0212 50000+: $0.0198 100000+: $0.0176
CCS15S30L3QUFTR -ND	CCS15S30,L3QUF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 500A @ 30V Capacitance @ Vr, F: 200pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: CST2C Operating Temperature - Junction: 125C (Max)	1000 Order	1+: $0
TBAV99LMTR-ND	TBAV99,LM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 125C (Max) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	1000 Order	3000+: $0.0228 6000+: $0.0198 15000+: $0.0169 30000+: $0.0159 75000+: $0.0149 150000+: $0.0132
CRZ11(TE85L,Q)- ND	CRZ11(TE85L,Q)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Zener (Nom) (Vz): 11V Tolerance: 10% Power - Max: 700mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10A @ 7V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40C ~ 150C Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Base Part Number: CRZ11	1000 Order	1+: $0
RN2107ACT(TPL3) TR-ND	RN2107ACT(TPL3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	1000 Order	1+: $0
RN1406SLF(D-ND	RN1406S,LF(D	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	1+: $0
RN1115MFVL3FTR- ND	RN1115MFV,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	16000 Order	8000+: $0.0167 16000+: $0.0146
SSM3J35CTL3FTR- ND	SSM3J35CT,L3F	Toshiba Semiconductor and Storage	View more Series: -MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V Power Dissipation (Max): 100mW (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	1000 Order	10000+: $0.0308
TPCA8051-H(T2L1 VMTR-ND	TPCA8051-H(T2L1 ,VM	Toshiba Semiconductor and Storage	View more Series: U-MOSVI-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 28A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7540pF @ 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	5000 Order	5000+: $0.9552
TK100A08N1S4X-N D	TK100A08N1,S4X	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 40V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	55 Order	1+: $2.7342 50+: $2.1991 100+: $2.0036 500+: $1.6224 1000+: $1.3683
TK4R3E06PLS1X-N D	TK4R3E06PL,S1X	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 2.5V @ 500A Gate Charge (Qg) (Max) @ Vgs: 48.2nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3280pF @ 30V Power Dissipation (Max): 87W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1594 Order	1+: $1.4364 50+: $1.1574 100+: $1.0416 500+: $0.8102 1000+: $0.6713
SSM3K7002CFULFT R-ND	SSM3K7002CFU,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: USM Package / Case: SC-70, SOT-323	1000 Order	3000+: $0.0222
2SC3665-YT2YNSF (J-ND	2SC3665-Y,T2YNS F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	1000 Order	1+: $0
TK8Q60WS1VQ-ND	TK8Q60W,S1VQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3.7V @ 400A Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 80W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Stub Leads, IPak	1000 Order	75+: $1.3186
TK30S06K3L(T6L1 NQ-ND	TK30S06K3L(T6L1 ,NQ	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 18 Ohm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 10V Power Dissipation (Max): 58W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.3753
TA48M0345F(6L1S NQTR-ND	TA48M0345F(6L1, SNQ	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 29V Voltage - Output (Min/Fixed): 3.45V Voltage Dropout (Max): 0.65V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): 1.4mA Current - Supply (Max): 25mA PSRR: 70dB (120Hz) Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD Base Part Number: TA48M	1000 Order	1+: $0
TC75S54FLFTR-ND	TC75S54F,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Amplifier Type: General Purpose Number of Circuits: 1 Slew Rate: 0.7 V/s Current - Input Bias: 1pA Voltage - Input Offset: 2mV Current - Supply: 100A Current - Output / Channel: 700A Voltage - Supply, Single/Dual (): 3.5 V ~ 7 V, 0.9 V ~ 1.8 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	1000 Order	3000+: $0.0884 6000+: $0.083 15000+: $0.0776 30000+: $0.0712 75000+: $0.0685
TMPM369FDFG-ND	TMPM369FDFG	Toshiba Semiconductor and Storage	View more Series: TX03 Packaging: Tray Part Status: Active Core Processor: ARM Cortex-M3 Core Size: 32-Bit Speed: 80MHz Connectivity: CANbus, EBI/EMI, Ethernet, IC, Microwire, SIO, SPI, SSP, UART/USART, USB Peripherals: DMA, POR, WDT Number of I/O: 102 Program Memory Size: 512KB (512K x 8) Program Memory Type: FLASH RAM Size: 128K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V Data Converters: A/D 16x12b, D/A 2x10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 144-FQFP Supplier Device Package: 144-LQFP (20x20) Base Part Number: TMPM369	160 Order	--
TC78H610FNGELTR -ND	TC78H610FNG,EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel Technology: DMOS Applications: General Purpose Current - Output: 800mA Voltage - Supply: 2.7 V ~ 5.5 V Voltage - Load: 2.5 V ~ 15 V Operating Temperature: -20C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 16-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-SSOP	1000 Order	2000+: $0.4593
TB67S141NG-ND	TB67S141NG	Toshiba Semiconductor and Storage	View more Series: * Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Mounting Type: Through Hole Package / Case: 24-SDIP (0.300", 7.62mm) Supplier Device Package: 24-SDIP	1000 Order	--
TB6613FTG8EL-ND	TB6613FTG,8,EL	Toshiba Semiconductor and Storage	View more Series: * Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant	1000 Order	2000+: $0.7484
SSM6N16FUTE85LF TR-ND	SSM6N16FUTE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100A Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 200mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	3000+: $0.0551
TL1L4-LL1LCS-ND	TL1L4-LL1,LCS	Toshiba Semiconductor and Storage	View more Series: LETERAS Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 2A (4 Weeks) Color: White, Warm CCT (K): 2700K Flux @ 85C, Current - Test: 115 lm (100 lm ~ 130 lm) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 117 lm/W CRI (Color Rendering Index): 80 Current - Max: 1.5A Viewing Angle: 120 Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.085" (2.15mm) Thermal Resistance of Package: 5C/W	1000 Order	1+: $0
DF2B6M4SLL3FTR- ND	DF2B6M4SL,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 5.5V (Max) Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 25V Current - Peak Pulse (10/1000s): 2A (8/20s) Power - Peak Pulse: 30W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: SL2	1000 Order	10000+: $0.0318 30000+: $0.0298 50000+: $0.0265
TL1WK-NW1LCSTR- ND	TL1WK-NW1,LCS	Toshiba Semiconductor and Storage	View more Series: LETERAS Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 2A (4 Weeks) Color: White, Cool CCT (K): 5000K Flux @ 25C, Current - Test: 22 lm (Typ) Current - Test: 180mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 130 lm/W CRI (Color Rendering Index): 80 Current - Max: 180mA Viewing Angle: 165 Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: SMD Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm) Height - Seated (Max): 0.015" (0.39mm) Thermal Resistance of Package: 17C/W JS	1000 Order	1+: $0
TLP3556A(F-ND	TLP3556A(F	Toshiba Semiconductor and Storage	View more Series: TLP3556A Packaging: Tube Part Status: Active Mounting Type: Through Hole Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.64VDC Voltage - Load: 0V ~ 100V Load Current: 2A On-State Resistance (Max): 200 mOhms Termination Style: PC Pin Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: 4-DIP	8 Order	1+: $1.6191 10+: $1.517 25+: $1.3482 50+: $1.2808 100+: $1.2134 300+: $1.0786 500+: $1.0112 1000+: $0.9437 5000+: $0.91
TLP3554(TP1F)-N D	TLP3554(TP1,F)	Toshiba Semiconductor and Storage	View more Series: TLP3554 Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.33VDC Voltage - Load: 0V ~ 40V Load Current: 2.5A On-State Resistance (Max): 150 mOhms Termination Style: Gull Wing Package / Case: 4-SMD (0.300", 7.62mm) Supplier Device Package: 4-SMD	1000 Order	1500+: $1.1378
TLP227G-2(F)-ND	TLP227G-2(F)	Toshiba Semiconductor and Storage	View more Series: TLP227G-2 Packaging: Tube Part Status: Active Mounting Type: Through Hole Circuit: SPST-NO (1 Form A) x 2 Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 350V Load Current: 120mA On-State Resistance (Max): 35 Ohms Termination Style: PC Pin Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	1000 Order	1+: $0
TA75S558FLFTR-N D	TA75S558F,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Amplifier Type: General Purpose Number of Circuits: 1 Slew Rate: 1 V/s Gain Bandwidth Product: 3MHz Current - Input Bias: 60nA Voltage - Input Offset: 500V Current - Supply: 2.5mA Current - Output / Channel: 40mA Voltage - Supply, Single/Dual (): 4 V ~ 18 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV Base Part Number: TA75S558	1000 Order	3000+: $0.0842 6000+: $0.0791 15000+: $0.074 30000+: $0.0679 75000+: $0.0653
74HC4053D(BJ)TR -ND	74HC4053D(BJ)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 3 On-State Resistance (Max): 100 Ohm Channel-to-Channel Matching (Ron): 5 Ohm (Typ) Voltage - Supply, Single (V+): 2 V ~ 6 V Switch Time (Ton, Toff) (Max): 38ns, 38ns -3db Bandwidth: 200MHz Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 100nA Crosstalk: -50dB @ 1MHz Operating Temperature: -40C ~ 85C Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	2500 Order	2500+: $0.0717 5000+: $0.0674 12500+: $0.063 25000+: $0.0578 62500+: $0.0556
TB62261FTGELTR- ND	TB62261FTG,EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 3 (168 Hours) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: 1, 1/2, 1/4 Applications: Appliance Current - Output: 1.4A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Supplier Device Package: 48-WQFN (7x7)	1000 Order	4000+: $0.7229
TK3A65D(STA4QM) -ND	TK3A65D(STA4,Q, M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.25 Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Power Dissipation (Max): 35W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	50+: $0.9434
RN4982LF(CTTR-N D	RN4982,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100A (ICBO) Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	3000+: $0.0411 6000+: $0.0357 15000+: $0.0304 30000+: $0.0286 75000+: $0.0268
RN1971FE(TE85LF )TR-ND	RN1971FE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	1+: $0
RN4901(T5LFT)TR -ND	RN4901(T5L,F,T)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0

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