Texas multiplexers interface - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
BQ4013MA-120-ND	BQ4013MA-120	Texas Instruments	View more Packaging: Tray Part Status: Obsolete Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 1Mb (128K x 8) Write Cycle Time - Word, Page: 120ns Access Time: 120ns Memory Interface: Parallel Voltage - Supply: 4.75 V ~ 5.5 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Through Hole Package / Case: 32-DIP Module (0.61", 15.49mm) Supplier Device Package: 32-DIP Module (18.42x42.8) Base Part Number: BQ4013	1000 Order	1+: $0
296-21948-2-ND	BQ2024DBZR	Texas Instruments	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1.5K (6 pages x 32 bytes) Memory Interface: Single Wire Voltage - Supply: 2.65 V ~ 5.5 V Operating Temperature: -20C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BQ2024	1000 Order	--
BQ2022LPRE3-ND	BQ2022LPRE3	Texas Instruments	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Kb (256b x 4 pages) Memory Interface: Single Wire Voltage - Supply: 2.65 V ~ 5.5 V Operating Temperature: -20C ~ 70C (TA) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: BQ2022	1000 Order	1+: $0
296-32842-5-ND	BQ4010YMA-150	Texas Instruments	View more Packaging: Tray Part Status: Obsolete Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 64Kb (8K x 8) Write Cycle Time - Word, Page: 150ns Access Time: 150ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Through Hole Package / Case: 28-DIP Module (0.61", 15.49mm) Supplier Device Package: 28-DIP Module (18.42x37.72) Base Part Number: BQ4010	1000 Order	--
296-19767-3-ND	BQ2022LPR	Texas Instruments	View more Packaging: Tape & Box (TB) Part Status: Obsolete Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Kb (256b x 4 pages) Memory Interface: Single Wire Voltage - Supply: 2.65 V ~ 5.5 V Operating Temperature: -20C ~ 70C (TA) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3 Base Part Number: BQ2022	1000 Order	1+: $0
296-32840-5-ND	BQ4010MA-150	Texas Instruments	View more Packaging: Tube Part Status: Obsolete Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 64Kb (8K x 8) Write Cycle Time - Word, Page: 150ns Access Time: 150ns Memory Interface: Parallel Voltage - Supply: 4.75 V ~ 5.5 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Through Hole Package / Case: 28-DIP Module (0.61", 15.49mm) Supplier Device Package: 28-DIP Module (18.42x37.72) Base Part Number: BQ4010	1000 Order	--
BQ4011YMA-150-N D	BQ4011YMA-150	Texas Instruments	View more Packaging: Tray Part Status: Obsolete Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Write Cycle Time - Word, Page: 150ns Access Time: 150ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Through Hole Package / Case: 28-DIP Module (0.61", 15.49mm) Supplier Device Package: 28-DIP Module (18.42x37.72) Base Part Number: BQ4011	1000 Order	--
296-22088-5-ND	BQ4011LYMA-70N	Texas Instruments	View more Packaging: Tray Part Status: Obsolete Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Write Cycle Time - Word, Page: 70ns Access Time: 70ns Memory Interface: Parallel Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Through Hole Package / Case: 28-DIP Module (0.61", 15.49mm) Supplier Device Package: 28-DIP Module (18.42x37.72) Base Part Number: BQ4011	1000 Order	1+: $0
296-32844-5-ND	BQ4013YMA-120	Texas Instruments	View more Packaging: Tray Part Status: Obsolete Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 1Mb (128K x 8) Write Cycle Time - Word, Page: 120ns Access Time: 120ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Through Hole Package / Case: 32-DIP Module (0.61", 15.49mm) Supplier Device Package: 32-DIP Module (18.42x42.8) Base Part Number: BQ4013	1000 Order	1+: $0
296-30068-2-ND	BQ2026DBZR	Texas Instruments	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1.5K (6 pages x 32 bytes) Memory Interface: Single Wire Voltage - Supply: 2.65 V ~ 5.5 V Operating Temperature: -20C ~ 70C (TA) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BQ2026	1000 Order	3000+: $0.2911 6000+: $0.2765 15000+: $0.2661
BQ4010YMA-70N-N D	BQ4010YMA-70N	Texas Instruments	View more Packaging: Tray Part Status: Obsolete Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 64Kb (8K x 8) Write Cycle Time - Word, Page: 70ns Access Time: 70ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Through Hole Package / Case: 28-DIP Module (0.61", 15.49mm) Supplier Device Package: 28-DIP Module (18.42x37.72) Base Part Number: BQ4010	1000 Order	1+: $0
296-9402-5-ND	BQ4016MC-70	Texas Instruments	View more Packaging: Tray Part Status: Obsolete Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 8Mb (1M x 8) Write Cycle Time - Word, Page: 70ns Access Time: 70ns Memory Interface: Parallel Voltage - Supply: 4.75 V ~ 5.5 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Through Hole Package / Case: 36-DIP Module (0.610", 15.49mm) Supplier Device Package: 36-DIP Module (18.42x52.96) Base Part Number: BQ4016	1000 Order	1+: $0
296-9396-5-ND	BQ4013YMA-85	Texas Instruments	View more Packaging: Tray Part Status: Obsolete Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 1Mb (128K x 8) Write Cycle Time - Word, Page: 85ns Access Time: 85ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Through Hole Package / Case: 32-DIP Module (0.61", 15.49mm) Supplier Device Package: 32-DIP Module (18.42x42.8) Base Part Number: BQ4013	1000 Order	--
BQ4010YMA-85-ND	BQ4010YMA-85	Texas Instruments	View more Packaging: Tray Part Status: Obsolete Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 64Kb (8K x 8) Write Cycle Time - Word, Page: 85ns Access Time: 85ns Memory Interface: Parallel Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0C ~ 70C (TA) Mounting Type: Through Hole Package / Case: 28-DIP Module (0.61", 15.49mm) Supplier Device Package: 28-DIP Module (18.42x37.72) Base Part Number: BQ4010	1000 Order	--
VPM9U1272S6B3PJ 1MAT-ND	VPM9U1272S6B3PJ 1MAT	Viking Technology	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Clock Frequency: 1.2GHz Memory Interface: Parallel Voltage - Supply: 1.2V	1000 Order	5+: $251.537
VPM9U1272S6B3PJ 1MAE-ND	VPM9U1272S6B3PJ 1MAE	Viking Technology	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Clock Frequency: 1.2GHz Memory Interface: Parallel Voltage - Supply: 1.2V	1000 Order	5+: $288.657
MT53D8DAHR-DC-N D	MT53D8DAHR-DC	Micron Technology Inc.	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Voltage - Supply: 1.1V	1000 Order	--
MT53D8DATZ-DC-N D	MT53D8DATZ-DC	Micron Technology Inc.	View more Part Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Voltage - Supply: 1.1V	1000 Order	1+: $0
DS28EL35QA-742+ 2TW-ND	DS28EL35QA-742+ 2TW	Maxim Integrated	View more Part Status: Obsolete	1000 Order	1+: $0
DS28EL35QA-742+ 2BW-ND	DS28EL35QA-742+ 2BW	Maxim Integrated	View more Part Status: Obsolete	1000 Order	1+: $0
VPM9U1272S6B3PJ 1MAM-ND	VPM9U1272S6B3PJ 1MAM	Viking Technology	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Clock Frequency: 1.2GHz Memory Interface: Parallel Voltage - Supply: 1.2V	1000 Order	5+: $427.329
VPM9U1272S6B3PJ 1MA-ND	VPM9U1272S6B3PJ 1MA	Viking Technology	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (512M x 8) Clock Frequency: 1.2GHz Memory Interface: Parallel Voltage - Supply: 1.2V	1000 Order	5+: $235.617
MT53B512M64D4PV -062WT:C-ND	MT53B512M64D4PV -062 WT:C	Micron Technology Inc.	View more Part Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Clock Frequency: 1600MHz Voltage - Supply: 1.1V Operating Temperature: -30C ~ 85C (TC)	1000 Order	1+: $0
ECF840AAACN-C1- Y3-ND	ECF840AAACN-C1- Y3	Micron Technology Inc.	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Voltage - Supply: 1.14 V ~ 1.95 V	1000 Order	1+: $0
MT29F4G16ABAFAH 4-AITES:F-ND	MT29F4G16ABAFAH 4-AITES:F	Micron Technology Inc.	View more Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	1+: $0
MT53D512M32D2DS -053AIT:D-ND	MT53D512M32D2DS -053 AIT:D	Micron Technology Inc.	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (512M x 32) Clock Frequency: 1866MHz Voltage - Supply: 1.1V Operating Temperature: -40C ~ 85C (TA)	1000 Order	--
MT53D256M64D4NY -046XT:B-ND	MT53D256M64D4NY -046 XT:B	Micron Technology Inc.	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Clock Frequency: 2133MHz Voltage - Supply: 1.1V Operating Temperature: -30C ~ 105C (TC)	1000 Order	1+: $0
MT53D1G64D8SQ-0 53WT:E-ND	MT53D1G64D8SQ-0 53 WT:E	Micron Technology Inc.	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 64Gb (1G x 64) Clock Frequency: 1866MHz Voltage - Supply: 1.1V Operating Temperature: -30C ~ 85C (TC)	1000 Order	1+: $0
ECF840AAACN-C2- Y3-ND	ECF840AAACN-C2- Y3	Micron Technology Inc.	View more Part Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Voltage - Supply: 1.14 V ~ 1.95 V	1000 Order	1+: $0
MT53B256M64D2TP -062XTES:CTR-ND	MT53B256M64D2TP -062 XT ES:C TR	Micron Technology Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Clock Frequency: 1600MHz Voltage - Supply: 1.1V	1000 Order	1+: $0
MT53B128M32D1NP -062WT:A-ND	MT53B128M32D1NP -062 WT:A	Micron Technology Inc.	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gb (128M x 32) Clock Frequency: 1600MHz Voltage - Supply: 1.1V Operating Temperature: -30C ~ 85C (TC)	1000 Order	1+: $0
MT53B512M64D4NW -062WT:D-ND	MT53B512M64D4NW -062 WT:D	Micron Technology Inc.	View more Part Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Clock Frequency: 1600MHz Voltage - Supply: 1.1V Operating Temperature: -30C ~ 85C (TC)	1000 Order	1+: $0
MT53D1024M32D4N Q-053WT:D-ND	MT53D1024M32D4N Q-053 WT:D	Micron Technology Inc.	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (1G x 32) Clock Frequency: 1866MHz Voltage - Supply: 1.1V Operating Temperature: -30C ~ 85C (TC)	1000 Order	1+: $0
MT53D1024M32D4D T-046AAT:D-ND	MT53D1024M32D4D T-046 AAT:D	Micron Technology Inc.	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (1G x 32) Clock Frequency: 2133MHz Voltage - Supply: 1.1V Operating Temperature: -40C ~ 105C (TA)	1000 Order	1+: $0
MT29F64G08CBABA WP-IT:B-ND	MT29F64G08CBABA WP-IT:B	Micron Technology Inc.	View more Part Status: Obsolete Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	--
MT29F16G08ABACA M72A3WC1P-ND	MT29F16G08ABACA M72A3WC1P	Micron Technology Inc.	View more Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 16Gb (2G x 8) Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0C ~ 70C (TA)	1000 Order	1+: $0
MT41K512M8V00HW C1-ND	MT41K512M8V00HW C1	Micron Technology Inc.	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0C ~ 95C (TC)	1000 Order	1+: $0
MT53D384M32D2DS -046AUT:C-ND	MT53D384M32D2DS -046 AUT:C	Micron Technology Inc.	View more Part Status: Obsolete Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 12Gb (384M x 32) Clock Frequency: 2133MHz Voltage - Supply: 1.1V Operating Temperature: -40C ~ 125C (TC)	1000 Order	1+: $0
MT53D512M64D4NZ -046WT:E-ND	MT53D512M64D4NZ -046 WT:E	Micron Technology Inc.	View more Part Status: Active Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Clock Frequency: 2133MHz Voltage - Supply: 1.1V Operating Temperature: -30C ~ 85C (TC)	1000 Order	1+: $0
MT29F2G08ABAEAH 4-AITX:E-ND	MT29F2G08ABAEAH 4-AITX:E	Micron Technology Inc.	View more Part Status: Active Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40C ~ 85C (TA)	1000 Order	--

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