BQ4011YMA-150 Allicdata Electronics
Allicdata Part #:

BQ4011YMA-150-ND

Manufacturer Part#:

BQ4011YMA-150

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Texas Instruments
Short Description: IC NVSRAM 256K PARALLEL 28DIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: BQ4011YMA-150 datasheetBQ4011YMA-150 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 150ns
Access Time: 150ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.61", 15.49mm)
Supplier Device Package: 28-DIP Module (18.42x37.72)
Base Part Number: BQ4011
Description

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BQ4011YMA-150 is a four-channel power stage IC designed to drive LEDs directly or to drive boost, flyback, or Buck/boost type converters. This chip not only delivers a high power density, but is also suitable for a wide range of memory applications such as static RAM, dynamic RAM, and flash memory.

The architecture of the BQ4011YMA-150 consists of four 32-bit power stages with adjustable output current and a 0.8V to 1.6V output voltage range. Each 32-bit power stage supplies up to 150mA of output current, which can be configured to drive up to four channels of LEDs. The power stages are also programmable for either boost, Buck, flyback, or Buck/boost type converters.

As a memory application, BQ4011YMA-150 is able to provide up to 10ns of address latency. The BQ4011YMA-150 is also designed to dissipate less heat and provide higher system efficiency compared to traditional memory applications such as SRAM or DRAM. The chip can support up to three clock cycles of read-write operation and is capable of providing up to 6ns of read cycle time.

In terms of working principle, BQ4011YMA-150 operates by performing a voltage-by-time conversion which allows it to accurately control the output voltage. The voltage-by-time conversion follows a linear or quadratic progression to draw current from a given source and provide a suitable output voltage. The voltage-by-time conversion is done by varying the number of clock cycles per second, thus allowing it to be used in applications requiring precise control over the system power consumption.

In addition, the BQ4011YMA-150 is able to provide up to 15ns of power-up time, which is suitable for memory reset operations. The on-chip interconnects between the power stages are also designed to support multiplexing and cascading, allowing data to be transmitted across the chip. Finally, the chip is designed to have an operating voltage of 1.2V to 3.3V, making it highly suitable for embedded memory applications.

In conclusion, BQ4011YMA-150 is an excellent power stage IC for memory applications. With its adjustable output current, low heat dissipation, and multiplexing and cascading capabilities, it can provide higher system efficiency for both static RAM and dynamic RAM. In addition, its voltage-by-time conversion principle gives it precise control over the output voltage, making it a suitable choice for embedded memory applications.

The specific data is subject to PDF, and the above content is for reference

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