MT29F64G08CBABAWP-IT:B Allicdata Electronics
Allicdata Part #:

MT29F64G08CBABAWP-IT:B-ND

Manufacturer Part#:

MT29F64G08CBABAWP-IT:B

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 64G PARALLEL 48TSOP
More Detail: FLASH - NAND Memory IC 64Gb (8G x 8) Parallel
DataSheet: MT29F64G08CBABAWP-IT:B datasheetMT29F64G08CBABAWP-IT:B Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory technologies, such as MT29F64G08CBABAWP-IT, are essential components of the current computing revolution. In particular, Multi-Level Cell (MLC) NAND, further referred to as the MT29F64G08CBABAWP-IT, is the key integrated storage medium of modern digital devices. A vast variety of products are enabled by the storage capabilities and performance of the memory. The purpose of this paper is to discuss the application field and working principles of MT29F64G08CBABAWP-IT.

The MT29F64G08CBABAWP-IT is a product of NAND flash memory designed and manufactured by Micron Technology. The product is optimized for use in embedded or mobile applications, such as automotive and consumer electronic devices. It provides the highest bit density available in a single package, reaching a capacity of up to 128GB.

The MT29F64G08CBABAWP-IT allows for two independent and simultaneous data streams, called dual-channel transfer. This feature enables faster read and write operations, increasing either the user experience or the performance of the device. The memory also includes an on-board error correction code engine that is capable of correcting single-bit and multi-bit errors. The system also includes an adaptive read feature that allows the device to compensate for process fluctuations, thus increasing the reliability of the storage. The temperatures to which the device can withstand range from -40°C to +85°C.

The working principles of the MT29F64G08CBABAWP-IT are based on a multi-level cell architecture. Instead of using single-bit storage cells, the cells are designed to store multiple data levels. This process of increasing the storage density is called “multi-level cell technology.” By using more of the available storage space in a single memory cell, more data can be collected, written, and read. An improvement in the number of bits stored per cell also translates into a higher performance, with the maximum of two bits being stored per cell.

The MT29F64G08CBABAWP-IT also works in a different way than the traditional flash memory; it utilizes a technique called “multi-plane technology.” It consists of a number of NAND flash memory dies, arranged in a single plane, which are stacked together and interconnected. This technology increases the read/write speed and parallel accesses, which allows for better overall performance. Additionally, the device includes advanced error correction algorithms, allowing better data protection and data reliability.

In conclusion, the MT29F64G08CBABAWP-IT is a type of NAND flash memory optimized for embedded and mobile applications. It offers high read/write speeds, a large number of bits per cell, error correction capabilities, and a wide operating temperature range. The memory is based on multi-level cell architecture and multi-plane technology, which enables increased density, speed, and reliability. This memory is a key component of the computing revolution and is used in a variety of embedded and mobile devices.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "MT29" Included word is 40
Part Number Manufacturer Price Quantity Description
55A1121-12-MT29CS2275L016 TE Connectiv... 2.0 $ 1000 55A CABLE/SINGLE WALLCond...
MT29F1G01ABAFDSF-AAT:F TR Micron Techn... 3.37 $ 1000 IC FLASH 1G SPI 16SOPFLAS...
MT29F1G08ABAFAH4-ITE:F TR Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 63VF...
MT29F1G08ABAEAWP-IT:E TR Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 48TS...
MT29F8G08ABACAWP-IT:C TR Micron Techn... 0.0 $ 1000 IC FLASH 8G PARALLEL 48TS...
MT29F4G08ABAEAWP:E TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 48TS...
MT29F4G08ABADAWP:D TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 48TS...
MT29F8G16ABBCAH4:C TR Micron Techn... 0.0 $ 1000 IC FLASH 8G PARALLEL 63VF...
MT29F32G08CBADAWP:D TR Micron Techn... 0.0 $ 1000 IC FLASH 32G PARALLEL 48T...
MT29F64G08CFACAWP:C TR Micron Techn... 0.0 $ 1000 IC FLASH 64G PARALLEL 48T...
MT29F1G08ABBFAH4-ITE:F TR Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 63VF...
MT29F2G01ABAGDSF-IT:G TR Micron Techn... 0.0 $ 1000 IC FLASH 2G SPI 16SOPFLAS...
MT29F2G08ABAEAH4-IT:E Micron Techn... -- 3476 IC FLASH 2G PARALLEL 63VF...
44B5121-20-MT29C1401-L302 TE Connectiv... 1.11 $ 1000 44B5121-20-MT29C1401-L302
44B5121-12-MT29C1401-L302 TE Connectiv... 2.35 $ 1000 44B5121-12-MT29C1401-L302
44B5121-16-MT29C1401-L302 TE Connectiv... 2.14 $ 1000 44B5121-16-MT29C1401-L302
MT29F1G08ABAEAH4:E TR Micron Techn... 1.91 $ 1000 IC FLASH 1G PARALLEL 63VF...
MT29F2G08ABAEAH4:E TR Micron Techn... 3.17 $ 5000 IC FLASH 2G PARALLEL 63VF...
MT29F4G08ABAEAWP-IT:E TR Micron Techn... 3.88 $ 1000 IC FLASH 4G PARALLEL 48TS...
MT29F64G08AFAAAWP-ITZ:A TR Micron Techn... 40.25 $ 1000 IC FLASH 64G PARALLEL 48T...
EPD5955-22-MT29C1693L016 TE Connectiv... 1.09 $ 1000 55A CABLE/SINGLE WALLCond...
MT29F2G08AADWP:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 48TS...
MT29F2G08AADWP-ET:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 48TS...
MT29F2G08ABDHC:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 63VF...
MT29F2G08ABDHC-ET:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 63VF...
MT29F2G16AADWP:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 48TS...
MT29F2G16AADWP-ET:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 48TS...
MT29F2G16ABDHC:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 63VF...
MT29F2G16ABDHC-ET:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 63VF...
MT29F4G08AACWC:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 48TS...
MT29F4G08AACWC-ET:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 48TS...
MT29F4G08ABCHC:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 63VF...
MT29F4G08ABCHC-ET:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 63VF...
MT29F4G08ABCWC-ET:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 48TS...
MT29F4G16AACWC:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 48TS...
MT29F4G16AACWC-ET:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 48TS...
MT29F4G16ABCHC:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 63VF...
MT29F4G16ABCHC-ET:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 63VF...
MT29F8G08AAAWP:A TR Micron Techn... 0.0 $ 1000 IC FLASH 8G PARALLEL 48TS...
MT29F16G08MAAWP:A TR Micron Techn... 0.0 $ 1000 IC FLASH 16G PARALLEL 48T...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics