SI8487DB-T1-E1 Discrete Semiconductor Products

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The SI8487DB-T1-E1 is a single N-channel logic level enhancement mode field-effect transistor (FET) manufactured by Vishay Siliconix. The transistor is an insulated-gate field-effect transistor. It is designed to operate with a low threshold voltage, and when operated in conjunction with other FET devices, can be used to build digital circuits that are extremely fast and power efficient.The transistor is made up of a source, a drain, and a gate. The source and the drain are separated by an insulation barrier, and the gate is connected to a voltage supply voltage that is slightly higher than the drain voltage. When the drain voltage is higher than the gate voltage, current is conducted from the source to the drain. The amount of current conducted depends on the drain to source voltage and the gate-to-source voltage, which is referred to as the “on” voltage. When the gate voltage is higher than the drain voltage, the transistor is “off”, and no current is conducted.The principle of operation of the SI8487DB-T1-E1 is simple. When the gate voltage is higher than the drain voltage, the transistor is “on”, and current is conducted. When the gate voltage is lower than the drain voltage, the transistor is “off”, and current is not conducted.The SI8487DB-T1-E1 is designed for a variety of application fields, such as switching, power control, and signal conditioning. Its main advantages include low power consumption, low cost, and low-voltage operation. It is commonly used in an application that requires switching a high amount of current with little voltage loss. It can also be used as an electronic switch in applications such as power control circuits.The SI8487DB-T1-E1 is a versatile device that can be used in a wide range of applications. Its low voltage and power requirements make it an ideal choice for applications where cost and power efficiency are of importance. It is also extremely reliable and has been proven to be capable of operating in a wide range of extreme temperatures. The SI8487DB-T1-E1 is extremely tolerant to voltage transients and has excellent noise immunity. It is also capable of withstanding a relatively high temperature, making it suitable for use in industrial and automotive applications. In summary, the SI8487DB-T1-E1 is a single N-channel logic level enhancement mode field-effect transistor manufactured by Vishay Siliconix. It is designed for applications such as switching, power control, and signal conditioning. Its main advantages include low power consumption, low cost, and low-voltage operation. It is capable of withstanding a high temperature and offers superior noise immunity and voltage transient performance.

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