BSH111,215 Discrete Semiconductor Products

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BSH111,215 is a low voltage P-Channel MOSFET and is specially designed for low voltage and high frequency mobile applications. The BSH111,215 is an enhancement type MOSFET which uses an additional electrode of negative voltage to enhance its conductivitiy. The BSH111,215 has a single-gate P-Channel structure that can operate over a wide range of parameters.

Due to the low voltage field-effect of the BSH111,215, it can be used in applications that require very low voltage operation. These applications may include portable electronics, automotive and consumer electronics. The BSH111,215 is also widely used in low-power switching equipment and high-speed control systems. It is a suitable device to use when working on RF, Wi-Fi, Bluetooth, IrDA, and Zigbee applications.

The BSH111,215 comes in a variety of sizes and packages, such as TO-252, DFN,and DFNS packages. The BSH111,215 features a maximum drain source voltage of 5V, a drain current of -20mA and an on-resistance of 2.6Ω@VDS=0.8V. The BSH111,215 has a maximum operating temperature of 85°C and a maximum current rating of 25mA. It also has a typical gate charge of 17.5nC and a gate-source capacitance of 2.6pF.

The working principle of the BSH111,215 is based on the principles of field-effect transistors. In field-effect transistors, the current between the source and drain is controlled by an input voltage applied to the gate terminal. When the gate voltage is higher than the threshold voltage, the MOS capacitor between the gate and source terminals is activated, and current starts to flow from the source to the drain through the channel. When the gate voltage is below the threshold voltage, there is no current flow in the channel.

To use the BSH111,215 in an application, the gate voltage needs to be adjusted to perform either an enhancement or depletion mode operation. An enhancement mode operation occurs when the gate voltage is higher than the threshold voltage, which increases the current between the source and the drain. A depletion mode operation occurs when the gate voltage is lower than the threshold voltage, which reduces the current between the source and the drain.

The BSH111,215 is designed to provide high-reliability switching performance in low voltage applications. It is well suited for use in automotive and consumer electronics, because of its low on-resistance, low input capacitance and low operating temperature. The BSH111,215 is an excellent choice for applications where a low operating voltage is needed with reliable operation.

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