Allicdata Part #: | 1727-2340-2-ND |
Manufacturer Part#: |
BSH111BKR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 55V SOT-23 |
More Detail: | N-Channel 55V 210mA (Ta) 302mW (Ta) Surface Mount ... |
DataSheet: | BSH111BKR Datasheet/PDF |
Quantity: | 30000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 210mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.5nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 30pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 302mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB (SOT23) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The BSH111BKR Field- Effect Transistor (FET) is an ultra-low voltage transistor that is specifically designed for low voltage applications. It is a single type MOSFET with low on-resistance and low gate charge that makes it useful for a wide range of applications. The main characteristics of this transistor are its small size, low power consumption and low on-resistance. BSH111BKR is a perfect device for use in battery powered systems, where power and space constraints are important factors.
The working principle of the BSH111BKR is based on the MOSFET structure, which means that it uses a junction between two conductive materials to switch current. It has four pins, which are the source, gate, drain, and body connections. The source is the input voltage, the gate is the control voltage, the drain is the output voltage, and the body is the substrate or the semiconductor material. The source is connected to a load, while the gate is usually connected to the control or trigger signal. The drain is connected to the output voltage. The body is connected to the source voltage.
The way the BSH111BKR works is very simple. When the gate is driven with a positive voltage, the transistor is turned ON and a current flows from the source to the drain. When the gate voltage is driven below a certain gate threshold voltage, the transistor is turned OFF and the current is blocked. This feature makes the BSH111BKR transistor ideal for use in low voltage applications as it can switch from ON to OFF quickly and easily.
The BSH111BKR is primarily used in applications such as mobile phones, laptops, PDAs, microwave ovens, LCDs, motor control, and power supply circuits. It is also useful for DC-DC converters that require low voltage switch-mode operation. The low power consumption and small size of the BSH111BKR make it an ideal choice for portable applications such as digital cameras and other battery powered devices. It is also an ideal device for power supply circuits since it has low current draw and low losses.
The BSH111BKR is an excellent device for low voltage applications due to its low on-resistance, low gate charge, and small size. It is ideal for portable devices and applications where power and space constraints are important factors. The fast switching speed and low current draw make it highly desirable for use in a wide range of low voltage applications.
The specific data is subject to PDF, and the above content is for reference
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