BSH111,235

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The BSH111,235 is a high-quality double polycrystalline silicon MOSFET, engineered specifically for applications in high-frequency circuit design and control. It is an advanced FET device, combining the characteristics of both FET and MOSFET technology to offer superior performance. The device is widely used for its ability to operate at low drain-source voltages and low gate currents, making it well suited for high-frequency applications.

This device offers high input impedance and excellent power characteristics, which makes it ideal for use in high-frequency switching, amplifier and RF circuit designs. The BSH111,235 also features high-channel-width, low stray capacitance between input and output, and very low drain-source on-resistance, allowing it to operate with very little power loss, making it an ideal choice for high-power applications. In addition, its fast switching speed, low input and output capacitance, and high breakdown voltage make it suitable for a variety of applications.

BSH111,235 is an n-channel MOSFET characterized by its low on-resistance and low Gate-source voltage. It consists of two silicon layers, and has a Gate-source structure. The thickness of each silicon layer determines the breakdown voltage. The Gate electrode is connected to the source, and the Gate threshold voltage is adjustable. The drain-source on-resistance of the device depends largely on the Gate bias. The MOSFET can be biased in the form of a linear voltage-controlled FET (VCOFET), leading to a higher degree of control over the current flowing through the device. In order to achieve this, the Gate voltage is adjusted to control the drain-source voltage. This allows the MOSFET to be used in various circuit topologies such as Class A, Class B, Class C, Class D, and even Class E.

The BSH111,235 is designed for applications such as high-frequency switching, power conversion, and power circuit design. It has been used in a wide range of applications, including amplifier design, power control, and communication systems. Its low on-resistance and high breakdown voltage make it ideal for applications such as high-frequency switching, and power conversion. It can also be used in analog circuits as a power amplifier, as it offers excellent power characteristics and low input capacitance.

The current-carrying capacity of a MOSFET is typically determined by the drain-source voltage. The MOSFET can operate in either depletion or enhancement mode. In depleted mode, the drain-source current flows through the device even when the Gate voltage is zero. This mode enables the device to switch from fully on state to fully off state very rapidly, without excess power dissipation. However, in enhanced mode, the Gate voltage needs to be greater than a certain threshold level in order for current to flow through the device.

In summary, the BSH111,235 is a versatile, high-performance double polycrystalline silicon MOSFET designed for high-frequency switching, amplifier and RF circuit designs. It is characterized by low on-resistance, low Gate-source voltage, high current-carrying capacity, and high breakdown voltage. It can be used in a variety of applications, including amplifier design, power control, and communication systems. It is suitable for Class A, Class B, Class C, Class D and Class E topologies.

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