Allicdata Part #: | MMBZ5265B-G3-18-ND |
Manufacturer Part#: |
MMBZ5265B-G3-18 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 62V 225MW SOT23-3 |
More Detail: | Zener Diode 62V 225mW ±5% Surface Mount SOT-23-3 |
DataSheet: | MMBZ5265B-G3-18 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02137 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 62V |
Tolerance: | ±5% |
Power - Max: | 225mW |
Impedance (Max) (Zzt): | 185 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 47V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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A MMBZ5265B-G3-18 is a single zener diode that offers superior electrical performance characteristics. It is rated at 5.1V, 18mA, and has a maximum voltage of 6.2V and a maximum power dissipation of 500mW. The device is constructed of a single zener junction and a vertical guard ring to attain the required breakdown voltage at low leakage current. This provides superior characteristics in various diagnostic equipment and applications.
The MMBZ5265B-G3-18 is a robust device and is suitable for a wide range of applications, including surge suppression and polarity protection. It is well-suited for use in automotive, industrial, security systems, communications, low-voltage circuits, and for general semiconductor protection. It is also ideal for use in microprocessors, memory circuits, and power converters.
The MMBZ5265B-G3-18 is designed to protect against transient voltage spikes and allow for better supply line filtering. It is particularly well-suited for low-voltage circuits, as well as for high-end applications such as communications systems. This diode features a low voltage drop and high leakage current, which makes it a perfect choice for automotive use. It has a small package size which allows for easier assembly and testing.
The working principle of the MMBZ5265B-G3-18 zener diode is based on the rectifying behavior of a reverse biased p-n junction. The breakdown voltage of the device is determined by a zener effect, where the breakdown voltage is a function of temperature. The zener breakdown voltage of the device is established by a vertical guard ring to control the leakage current as well as to maintain the breakdown voltage in the required range. Furthermore, the rectifying nature of the diode allows for the protection of the device from excessive voltage.
The MMBZ5265B-G3-18 is an ideal choice for a variety of applications requiring a low-voltage protection device. Its high performance characteristics and low voltage drop make it well-suited for automotive use and for high-end communications systems. It can provide superior protection from transient voltage spikes, as well as improve supply line filtering for better stability and reliability. Its small package size allows for easier assembly and testing, making it a perfect fit in a range of applications.
The specific data is subject to PDF, and the above content is for reference
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