LND150N3-G-P013

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

LND150N3-G-P013 Application Field and Working Principle

The LND150N3-G-P013 is a N-channel enhancement mode Field Effect Transistor (FET) manufactured by STMicroelectronics. It is offered in a super-small, plastic surface-mount package, making it ideal for high density applications.

This type of MOSFET is designed for high speed switching applications such as pulse generators and power converters. With an on-resistance of only 9.5 ohms and an operating temperature of -55 °C to 125 °C, it\'s a great device for a variety of different applications.

Working Principle

The LND150N3-G-P013 is an enhancement-mode FET, meaning the channel is pinched-off at zero applied gate-source voltage. This is accomplished by the depletion layer that exists between the source and the drain. When a positive voltage is applied to the gate, electrons are drawn toward the positive gate and the channel expands, allowing a current to flow between the source and the drain.

The feedback mechanism in the LND150N3-G-P013 provides temperature compensation, meaning the device maintains a consistent threshold voltage across a wide range of temperatures. This ensures that the device will operate reliably from -55 °C to 125 °C.

Applications

The LND150N3-G-P013 is designed for high-speed switching applications where size and power consumption are major considerations. This device can be found in a wide range of applications, including RF transmitters and receivers, power converters, pulse generators, motor control, and embedded microcontrollers.

In a motor control application, the LND150N3-G-P013 can be used to quickly switch motor direction. Since it is a N-channel FET, it can be used as either a high side or low side switch. When used as a high side switch, the device will turn the motor on when the gate voltage is high. When used as a low side switch, the device will turn the motor off when the gate voltage is high.

In a pulse generator application, the LND150N3-G-P013 can be used to generate high-speed, low-power pulses. When used in a switching circuit, the device can be used to generate very high-speed pulses at frequencies up to 100 MHz.

In an RF transmitter or receiver application, the LND150N3-G-P013 can be used to switch between different stages of the circuit. It can also be used to switch between receive and transmit modes, or to switch between different antenna elements.

Finally, the LND150N3-G-P013 can be used in power conversion applications to switch between different voltage sources. With its low on-resistance and fast switching speeds, it is an ideal device for efficient power conversion.

Conclusion

The LND150N3-G-P013 is a N-channel enhancement-mode Field Effect Transistor (FET) offering low on-resistance and fast switching speeds. It is offered in a super-small, plastic surface-mount package, making it ideal for high density applications. This type of MOSFET is designed for high speed switching applications such as pulse generators and power converters, and can be found in a wide range of applications, including RF transmitters and receivers, power converters, pulse generators, motor control, and embedded microcontrollers.

The specific data is subject to PDF, and the above content is for reference