LND150N3-G-P002

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LND150N3-G-P002 application field and working principle

The LND150N3-G-P002 is a N-Channel Power MOSFET, commonly referred to as a MOSFET or FET, that uses a field effect to control current in electronic circuits. This MOSFET is designed for low-cost, low-voltage power applications. It is used in a wide range of applications from switching devices to power management and conversion.

The LND150N3-G-P002 has a drain-source voltage rating of 150V and an on-state resistance of 0.08 ohms. It has a maximum continuous drain current is 18A with a maximum pulse drain current of 75A. It has an impressive power dissipation at 25°C of 8.3W and can handle a maximum operating temperature of 175°C. The LND150N3-G-P002 is housed in a TO-220 N-Channel package and measures 9.90 mm x 4.83 mm.

How Does A MOSFET Work?

MOSFETs are semiconductor devices that use an electric field to control the movement of electrons in a circuit. The LND150N3-G-P002 is a particular type of MOSFET commonly referred to as a “Power MOSFET”. This type of transistor uses an electric field to switch relatively large amounts of electrical current for low-voltage applications. This makes them ideal for switching applications such as relays and motors.

When applying a voltage to the gate terminal of the FET, the conductivity of the N-type semiconductor increases exponentially. This increases the current that is flowing through the source and drain of the FET, which is commonly referred to as the “ON-state”. Similarly, when the gate voltage is removed, the current will cease to flow, causing the FET to enter the “OFF-state”.

LND150N3-G-P002 Applications

The LND150N3-G-P002 is suited for a variety of low-voltage applications such as power management, high- and low-side switch, level shifter, synchronization, phase and voltage control, inverting and non-inverting logic level conversion, switch-mode power supply (SMPS) control, and load control. Due to its wide range of applications, the LND150N3-G-P002 is commonly used in battery chargers, power tools, UPS systems, and communication modules.

The LND150N3-G-P002 is designed for easy integration into end user applications– it is small in size, consumes little power, and operates at relatively low temperatures. In addition, it is manufactured with a Gate-Source clamp which protects the gate from over-voltage damage, thus adding an extra layer of reliability and protection to the system.

Conclusion

The LND150N3-G-P002 is a highly reliable N-Channel MOSFET designed for low-voltage applications. It is capable of handling large current pulses, has a low on-state resistance, and is equipped with a Gate-Source clamp for additional protection. Due to its versatility, the LND150N3-G-P002 is suitable for a wide range of applications, being used in battery chargers, power tools, UPS systems, and communication modules.

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