Allicdata Part #: | NX138BKWF-ND |
Manufacturer Part#: |
NX138BKWF |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CHANNEL 60V 210MA SC70 |
More Detail: | N-Channel 60V 210mA (Ta) Surface Mount SC-70 |
DataSheet: | NX138BKWF Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02029 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 210mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.7nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 20pF @ 30V |
FET Feature: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SC-70 |
Package / Case: | SC-70, SOT-323 |
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The NX138BKWF is a high-performance, high-reliability, steel-encapsulated, MOSFET switching FET. It is designed to be highly efficient as a power switching device, providing greater power and control over electrical circuits and systems. The MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, is composed of two layers that form the gate-source-drain structure. The channel between the gate and the outside world enables current flow in only one direction.
The NX138BKWF offers superior performance compared to traditional bipolar transistors, offering superior switching speed and low power consumption. It also provides superior levels of protection against short circuits, overload and over voltage conditions, making it an ideal device for applications where power and protection are paramount.
The NX138BKWF is used in a wide range of applications, from controlling loads in switching power supplies to controlling maximum power available in industrial processes. It can even be used in DC-DC converter applications for low-power applications, as well as for driving power amplifying circuits. It can be used in a variety of industrial and consumer-based applications, where it is replacing traditional power switching technologies.
The NX138BKWF is a highly reliable and efficient device due to the combination of several technologies. It utilizes insulated gate technology, which helps to protect the chip from extreme voltage differences, while its ultra-thin body allows for increased power density, increased current flow and improved thermal performance. The insulated gate also helps to reduce the potential for electrostatic discharge damage.
The NX138BKWF also utilizes a physical design that helps to reduce capacitive coupling, reducing the chance of battery shorting and saving energy. The high performance and reliability of the device are further enhanced by its on-chip current sensing capabilities, temperature monitoring and single shot pulse protection technology.
The NX138BKWF is easy to use and provides users with maximum flexibility. It can be driven by standard logic signals and can be operated with a wide range of voltages, from 3.3V to 48V. The device features various features to ensure users can optimize their power systems for maximum performance. It also has power-on reset and shutdown functions for building fault tolerant systems.
The NX138BKWF is an ideal device for a wide range of applications, offering superior performance, reliability and superior protection capabilities. It is an ideal choice for power switching applications such as those used in power supplies, DC-DC converters, and industrial controllers. It is also an excellent choice for driving power amplifying circuits.
The specific data is subject to PDF, and the above content is for reference
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