NX3008NBKT,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-10497-2-ND |
Manufacturer Part#: |
NX3008NBKT,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V SC-75 |
More Detail: | N-Channel 30V 350mA (Ta) 250mW (Ta), 770mW (Tc) Su... |
DataSheet: | NX3008NBKT,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 350mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 350mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.68nC @ 4.5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 250mW (Ta), 770mW (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SC-75 |
Package / Case: | SC-75, SOT-416 |
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NX3008NBKT,115 is a single P-channel enhancement-mode MOSFET optimized for very low on-state resistance, RDS(on). It is mainly used as a switch in various applications such as battery management, motor and heater control and power management circuits.
NX3008NBKT is a 60 V P-channel MOSFET in a SOT-23 surface mount package. It has a low on-state resistance of 0.5 Ohm, making it an effective choice for implementing switch circuits in applications where board space is limited. The maximum gate-source voltage is -7 V, and the minimum gate-source voltage is -2 V, which helps to simplify the design of the control circuit.
A MOSFET consists of three terminals: Source, Drain and Gate. The Source is connected to the negative power supply. When the gate receives a positive signal, the MOSFET is “turned on” and the current flows between the source and the drain. The NX3008NBKT is an enhancement-mode MOSFET, meaning that the gate needs to receive a positive voltage to switch on, unlike a depletion-mode MOSFET which switches on when the gate voltage is zero or negative.
The working principle of the NX3008NBKT is based on the MOSFET’s ability to conduct current between its source and its drain. The MOSFET is turned on when a positive voltage is applied to the gate, thus allowing current to flow between the source and the drain. The current flow is controlled by the voltage applied to the gate. The higher the voltage, the more current will flow. By controlling the voltage applied to the gate, the current passing between the source and the drain can be precisely controlled, making the NX3008NBKT ideal for use in circuits such as battery management, motor and heater control and power management circuits.
In conclusion, the NX3008NBKT,115 is a single P-channel enhancement-mode MOSFET optimized for very low on-state resistance, RDS(on). It is well suited for applications where board space is limited, such as battery management, motor and heater control and power management circuits. Its ability to precisely control the current flow between its source and its drain makes it an ideal choice for these applications.
The specific data is subject to PDF, and the above content is for reference
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